Apparatus and methods for micro-transfer-printing

ABSTRACT

In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.

PRIORITY APPLICATIONS

This application claims priority to and the benefit of U.S. ProvisionalPatent Application No. 62/026,694, filed Jul. 20, 2014, entitled“Apparatus and Method for Micro-Transfer Printing” and U.S. ProvisionalPatent Application No. 62/027,166, filed Jul. 21, 2014, entitled“Methods and Tools for Micro-Transfer Printing,” the contents of each ofwhich is incorporated by reference herein in its entirety.

FIELD OF THE INVENTION

The present invention relates to methods and tools formicro-transfer-printing printable devices to destination substrates.

BACKGROUND OF THE INVENTION

The disclosed technology relates generally to methods and tools formicro-transfer-printing. It is often difficult to pick up and placeultra-thin and/or small devices using this technology. Micro transferprinting permits the selection and application of these ultra-thin,fragile, and/or small devices without causing damage to the devicesthemselves.

Micro-transfer-printing allows for deterministically assembling andintegrating arrays of micro-scale, high-performance devices ontonon-native substrates. In its simplest embodiment,micro-transfer-printing is analogous to using a rubber stamp to transferliquid-based inks from an ink-pad onto paper. However, inmicro-transfer-printing the “inks” are composed of high-performancesolid-state semiconductor devices and the “paper” can be substrates,including plastics and other semiconductors. The micro-transfer-printingprocess leverages engineered elastomer stamps coupled withhigh-precision motion-controlled print-heads to selectively pick-up andprint large arrays of micro-scale devices onto non-native destinationsubstrates.

Adhesion between the elastomer transfer device and the printable elementcan be selectively tuned by varying the speed of the print-head. Thisrate-dependent adhesion is a consequence of the viscoelastic nature ofthe elastomer used to construct the transfer device. When the transferdevice is moved quickly away from a bonded interface, the adhesion islarge enough to “pick” the printable elements away from their nativesubstrates, and conversely, when the transfer device is moved slowlyaway from a bonded interface the adhesion is low enough to “let go” or“print” the element onto a foreign surface. This process may beperformed in massively parallel operations in which the stamps cantransfer, for example, hundreds to thousands of discrete structures in asingle pick-up and print operation.

Micro transfer printing also enables parallel assembly ofhigh-performance semiconductor devices onto virtually any substratematerial, including glass, plastics, metals, or other semiconductors.The substrates may be flexible, thereby permitting the production offlexible electronic devices. Flexible substrates may be integrated in alarge number of configurations, including configurations not possiblewith brittle silicon-based electronic devices. Additionally, plasticsubstrates, for example, are mechanically rugged and may be used toprovide electronic devices that are less susceptible to damage orelectronic performance degradation caused by mechanical stress. Thus,these materials may be used to fabricate electronic devices bycontinuous, high-speed, printing techniques capable of generatingelectronic devices over large substrate areas at low cost (e.g., roll toroll manufacturing).

Moreover, these micro transfer printing techniques can printsemiconductor devices at temperatures compatible with assembly onplastic polymer substrates. In addition, semiconductor materials may beprinted onto large areas of substrates thereby enabling continuous, highspeed printing of complex integrated electrical circuits over largesubstrate areas. Moreover, fully flexible electronic devices with goodelectronic performance in flexed or deformed device orientations may beprovided to enable a wide range of flexible electronic devices.

Micro-structured stamps may be used to pick up micro devices, transportthe micro devices to the destination, and print the micro devices onto adestination substrate. The transfer device (e.g., micro-structuredstamp) can be created using various materials. Posts on the transferdevice can be generated such that they pick up material from a pick-ableobject and then print the material to the target substrate. The postscan be generated in an array fashion and can be a range of heightsdepending on the size of the printable material. Compression (in the zdirection) of the transfer device can be used to fully laminate thearray of printable objects to the posts of the transfer device.Additionally, compression can be used to allow for a critical velocityto be reached by increasing the distance the stamp is moved at a setacceleration based on the equation v²=2ad.

However, compression of the transfer device poses several issues. Amongother things, there is a possibility of sagging between posts. This sagallows for unwanted materials to be picked up from the source substrate.As the span between adjacent posts is increased, the risk of sag causingproblems increases. Additionally, there is a crowning effect that can benoted at the edge of the transfer device bulk material that is caused bythe coefficient of thermal expansion (CTE) mismatch between the bulkmaterial and the hard plate interface (e.g., glass) as shown, forexample, in FIG. 22. Thus, there is a need for techniques that minimizeor eliminate at least these issues and increase bonding when devices areprinted.

Transfer printing with a visco-elastic stamp material requires ahigh-velocity separation between stamp and source material to “pick”chips. Typical applications use approximately 1 g of acceleration toaccomplish the chip or die “pick” process step. However, the velocity atseparation occurs at small distances (e.g., tens of microns or less)dependent on the compression of the stamp at lamination. Thus, there isa need for greater acceleration to create higher separation velocitiesat small distances that in turn increases the adhesion between the stampand source.

SUMMARY OF THE INVENTION

As described herein, the present disclosure provides methods and toolsfor micro transfer printing. In certain embodiments, the disclosedtechnology utilizes high acceleration when picking up chips from thesource wafer. Traditional methods of the “pick” process utilize avertical stage (with stamp attached) that moves the stamp rapidlyupward, away from the substrate. Typically, approximately 1 g ofacceleration is used to pick up devices from the native substrate. Incertain embodiments, it is advantageous to increase the initialacceleration (5-100 g) to achieve higher velocities during the pickprocess. The velocity at separation occurs at very small traveldistances that are dependent on the compression of the stamp atlamination. Higher acceleration can create higher separation velocitiesat small distances that in turn increases the adhesion between the stampand source. Movement of the stamp in the downward direction, away fromthe source substrate, during the “pick” process can increase the overallacceleration by moving with gravity, and therefore can add an additional1 g of acceleration to the transfer.

In certain embodiments, heat-assisted micro-transfer-printing isperformed to adhesiveless surfaces and topographic surfaces. Polymerencapsulations can be used to enhance transfer of semiconductor devicesto non-native substrates when the polymer is designed to contract andthen reflow while in contact with the destination substrate. The polymerlayer can be subsequently removed while leaving behind the transferreddevice on the non-native substrate. This also improves the ability tomicro-transfer-print to topographic surfaces.

A plasma treatment (e.g., no vacuum required) can be performed duringmicro transfer printing. The plasma can be applied to bottom surfaces ofdevices that are attached to an elastomer transfer-element. Thistreatment of bottom surfaces can be used (i) to provide improved bondingbetween the devices and destination substrate, (ii) to clean the bottomsurface of devices that have been fabricated using epitaxial lift-offmethods, and (iii) to remove thin layers of oxides (e.g., Cu—Cu,CuSn—Cu, Cu—Sn—Sn—Cu, Au—Au) from the bottom surface (e.g., if areducing gas such as forming gas, ammonia, formic acid, etc., is addedto the plasma). The treatment can be applied to the devices while theyare on the transfer device in a manner in which the devices areun-distributed (e.g., do not fall of the stamp).

In certain embodiments, plasma treatment can be applied to the bottomsurfaces of devices that are attached to the transfer device. Thetreatment can be used to improve bonding between the devices and thedestination substrate. The treatment can be used to clean the bottomsurfaces and or to remove any layers of oxides from the bottom surfaces.If the devices have a backside metal, the plasma can be used to removeoxides from the surface of the metal.

In certain embodiments, if the devices have a backside metal, thesemiconductor elements are printed to a destination substrate withmating metal pads that have been coated with a flux. After transferringthe devices, the flux can be reflowed thereby leaving a good metalconnection between the pads and the backside metal on the devices.

A crowning effect can be noted at the edge of the transfer device bulkmaterial manufactured using prior art methods. The crowning is caused bythe coefficient of thermal expansion (CTE) mismatch between the bulkmaterial and the hard-plate interface (e.g., glass) as shown, forexample, in FIG. 22. In certain embodiments, the disclosed technologyincludes transfer devices designed to eliminate or reduce issues relatedto crowning. In certain embodiments, the crown is cut with a razor sothat printable semiconductor elements are not picked up by the crownduring a print operation.

In certain embodiments, a second material is placed between the bulkvolume and the hard-plate interface. As a result, the bulk volumematerial directly above the second material is thinner than it otherwisewould be. This produces a smaller crown since there is less material todeform and bulge to form the crown.

In some embodiments, the bezel or sidewall of the bulk volume is suchthat crowning is minimized. As explained below, certain shape sidewallsresult in a transfer device with less crowning.

In certain embodiments, multiple bulk material layers (e.g.,viscoelastic material) are provided. The first bulk material layer is onthe hard-plate interface and typically has what would normally be aproblematic crown. A second bulk material layer is provided on the firstbulk material layer. The second bulk material layer is thinner than thefirst bulk material layer. As the second bulk material layer is thinner,it will have a smaller crown. The posts are placed on the second bulkmaterial layer and are prominent relative to the crown on the secondlayer of bulk material. Additionally, the posts are prominent relativeto the first bulk material layer since the thickness of the second bulkmaterial layer and the height of the posts combined is larger than thecrown on the first layer of bulk material.

In certain embodiments, the transfer devices has multi-tiered posts withsuccessively smaller cross sections on successive tiers of posts. Amicro-post is formed on a post. The micro-post is used to physicallycontact the printable semiconductor devices. The micro-post is typicallyshorter and narrower than the post. The use of multi-tiered posts allowsdesired aspect ratios for the posts to be maintained while stillallowing small devices to be picked up. The height gained by themulti-tiered post can reduce the risk of crowning problems as the heightof the post is increased. Additionally, the multi-tiered posts canreduce issues related to sagging.

When a transfer device is compressed during a pickup operation, there isa possibility of sagging between posts. This sag allows for unwantedmaterials to be picked up from the source substrate. As the span betweenadjacent posts is increased, the risk of sag causing problems increases.

Multi-tiered posts can be used to increase the height of the posts whilemaintaining desired aspect ratios for the posts, thus reducing issuesrelated to sagging and crowning. In certain embodiments, anti-sagfeatures are provided between posts on the transfer device. The anti-sagfeatures can have an aspect ratio such that they will not pick updevices. In this manner, the anti-sag posts prevent the body of the bulkmaterial in the transfer device from contacting the source substrate,thereby reducing issues related to sagging.

In certain embodiments, the transfer device is provided with a roughsurface between the posts. The rough surface reduces the risk thatprintable semiconductor elements will be picked up if sagging occursbecause the rough surface reduces adhesion.

In one aspect, the disclosed technology includes a method for assemblinga semiconductor device on a receiving surface of a destinationsubstrate, the method including: providing the semiconductor deviceformed on a native substrate; contacting a top surface of thesemiconductor device with a conformable transfer device having a contactsurface, wherein contact between the contact surface and the top surfaceof the semiconductor device at least temporarily binds the semiconductordevice to the conformable transfer device; separating the semiconductordevice from the native substrate such that the contact surface of theconformable transfer device has the semiconductor device disposedthereon with the semiconductor device released from the nativesubstrate; prior to contacting the semiconductor device with thereceiving surface of the destination substrate, exposing a backsidesurface of the semiconductor device to a plasma (e.g., atmosphericplasma) following separation from the native substrate; contacting thesemiconductor device disposed on the contact surface with the receivingsurface of the destination substrate; and separating the contact surfaceof the conformable transfer device from the semiconductor device,thereby assembling the semiconductor device on the receiving surface ofthe destination substrate.

In certain embodiments, exposing the backside surface to plasma improvesbonding between the semiconductor device and the receiving substrate ofthe destination substrate.

In certain embodiments, exposing the backside surface to plasma cleansthe backside surface of the semiconductor device.

In certain embodiments, exposing the backside surface to plasma removesthin layers of oxides from the backside surface of the semiconductordevice.

In certain embodiments, the destination substrate is a member selectedfrom the group consisting of polymer, plastic, resin, polyimide, PEN,PET, metal, metal foil, glass, a semiconductor, and sapphire.

In certain embodiments, the destination substrate has a transparencygreater than or equal to 50%, 80%, 90%, or 95% for visible light.

In certain embodiments, the native substrate comprises a member selectedform the group consisting of inorganic semiconductor material, singlecrystalline silicon wafers, silicon on insulator wafers, polycrystallinesilicon wafers, GaAs wafers, Si (1 1 1), InAlP, InP, GaAs, InGaAs,AlGaAs, GaSb, GaAlSb, AlSb, InSb, InGaAlSbAs, InAlSb, and InGaP.

In certain embodiments, the plasma comprises a reducing gas.

In certain embodiments, the method includes controlling at least one ofa duty cycle, residence time, power of the plasma, and distance of theplasma to the semiconductor device to prevent shearing and delaminationof the semiconductor devices from the contacting surface of theconformable transfer device.

In certain embodiments, the backside surface of the semiconductor devicecomprises metal.

In certain embodiments, the metal is at least one of copper, tin,aluminum, and a mixture thereof.

In certain embodiments, the receiving surface of the destinationsubstrate at least in part comprises metal.

In certain embodiments, the metal is at least one of copper, tin,aluminum, and a mixture thereof.

In certain embodiments, conformable transfer device comprises at leastone of a visco-elastic stamp and an elastic stamp.

In certain embodiments, the method includes, prior to contacting thesemiconductor device disposed on the contact surface with the receivingsurface of the destination substrate, separating the conformabletransfer device from the native substrate, thereby picking up thesemiconductor device from the native substrate.

In certain embodiments, separating the conformable transfer device fromthe native substrate is performed with an initial acceleration of noless than 5 g (e.g., 5-100 g).

In certain embodiments, said separating the conformable transfer devicefrom the native substrate comprises one or both of the following: (i)moving the conformable transfer device away from the native substrate;and (ii) moving the native substrate away from the conformable transferdevice.

In certain embodiments, the conformable transfer device comprises atleast one of a cylindrical post, triangular post, rectangular post,pentagonal post, hexagonal post, heptagonal post, and octagonal post.

In certain embodiments, the conformable transfer device comprises atransfer device layer with a plurality of posts, each of the postsshaped to contact an individual semiconductor device from the nativesubstrate, thereby assembling an array of semiconductor devices on thereceiving surface of the destination substrate.

In certain embodiments, the conformable transfer device comprises one ormore anti-sag posts located between two adjacent posts of the pluralityof posts.

In certain embodiments, the anti-sag posts have a height that is lessthan the height of one or more of the posts.

In certain embodiments, the surface of the transfer device between eachpost of the plurality of posts is a roughened surface.

In certain embodiments, a bulk volume of the transfer device comprises afirst material and the plurality of posts comprise a second material,wherein the plurality of posts are disposed on the bulk volume.

In certain embodiments, the method includes, after contacting thesemiconductor device disposed on the contact surface with the receivingsurface of the destination substrate, heating, by a heating element, thepolymer layer.

In certain embodiments, the method includes, after providing thesemiconductor device formed on a native substrate, etching at least aportion of a release layer formed between the semiconductor device andthe native substrate.

In certain embodiments, the semiconductor device comprises a unitaryinorganic semiconductor structure.

In certain embodiments, the destination substrate comprises Si.

In certain embodiments, the semiconductor device comprises anencapsulating polymer layer.

In certain embodiments, the conformable transfer device comprises one ormore anti-sag posts of the same height as the plurality of posts, eachanti-sag post located between at least two posts of the plurality ofposts.

In certain embodiments, the semiconductor device is assembled on thereceiving surface of the destination substrate such that a metalbackside surface of the semiconductor device at least partially contactsa flux layer on the destination substrate.

In certain embodiments, the method includes, after assembling thesemiconductor device on the receiving surface of the destinationsubstrate, thermally treating the flux layer, thereby securing the metalbackside surface to the metal pad.

In certain embodiments, the semiconductor device has a polymer layerdisposed on a top surface of the semiconductor device.

In another aspect, the disclosed technology includes a method forassembling a semiconductor device on a receiving surface of adestination substrate, the method including: providing the semiconductordevice formed on a native substrate with a polymer layer disposed on atop surface of the semiconductor device; contacting the polymer layer ofthe semiconductor device with a conformable transfer device having acontact surface, wherein contact between the contact surface and thesemiconductor device at least temporarily binds the semiconductor deviceto the conformable transfer device; separating the semiconductor devicefrom the native substrate so that the semiconductor device is disposedon the contact surface of the conformable transfer device and isreleased from the native substrate; contacting the semiconductor devicedisposed on the contact surface to the receiving surface of thedestination substrate; heating, by a heating element, the polymer layer;and separating the contact surface of the conformable transfer devicefrom the semiconductor device so that the semiconductor device istransferred onto the receiving surface, thereby assembling thesemiconductor device on the receiving surface of the destinationsubstrate.

In certain embodiments, the heating element is a hotplate.

In certain embodiments, the heating element is disposed on a side of thedestination substrate opposite the semiconductor device.

In certain embodiments, the destination substrate is non-native to thesemiconductor devices.

In certain embodiments, the method includes, after heating the polymerlayer, removing, at least in part, the polymer.

In certain embodiments, heat from the heating element reduces aviscosity of the polymer layer and causes the polymer layer to flow.

In certain embodiments, the polymer layer is disposed on the top surfaceof the semiconductor device and one or more sides of the semiconductordevice.

In certain embodiments, the polymer layer encapsulates at least aportion of the printable semiconductor on the native substrate.

In certain embodiments, the receiving surface of the destinationsubstrate comprises a non-planar topographical surface.

In certain embodiments, the destination substrate is a member selectedfrom the group consisting of polymer, plastic, resin, polyimide, PEN,PET, metal, metal foil, glass, a semiconductor, and sapphire.

In certain embodiments, the destination substrate has a transparencygreater than or equal to 50%, 80%, 90%, or 95% for visible light.

In certain embodiments, the native substrate comprises a member selectedform the group consisting of inorganic semiconductor material, singlecrystalline silicon wafers, silicon on insulator wafers, polycrystallinesilicon wafers, GaAs wafers, Si (1 1 1), InAlP, InP, GaAs, InGaAs,AlGaAs, GaSb, GaAlSb, AlSb, InSb, InGaAlSbAs, InAlSb, and InGaP.

In certain embodiments, the semiconductor device is assembled on thereceiving surface of the destination substrate such that a metalbackside surface of the semiconductor device at least partially contactsa flux layer on the destination substrate.

In certain embodiments, the method includes, after assembling thesemiconductor device on the receiving surface of the destinationsubstrate, thermally treating the flux layer, thereby securing the metalbackside surface to the metal pad.

In certain embodiments, the method includes, prior to contacting thesemiconductor device with the receiving surface of the destinationsubstrate, exposing a backside surface of the semiconductor device,opposite the top surface of the semiconductor device, to plasmafollowing separation from the native substrate.

In another aspect, the disclosed technology includes a method forassembling a semiconductor device on a receiving surface of adestination substrate, the method including: providing the semiconductordevice formed on a native substrate, the semiconductor device comprisinga metal backside surface; contacting a top surface of the semiconductordevice with a conformable transfer device having a contact surface,wherein contact between the contact surface and the semiconductor deviceat least temporarily binds the semiconductor device to the conformabletransfer device; separating the semiconductor device from the nativesubstrate so that the contact surface of the conformable transfer devicehas the semiconductor device disposed thereon with the semiconductordevice released from the native substrate; contacting the semiconductordevice disposed on the contact surface with the receiving surface of thedestination substrate, wherein the receiving surface comprises a fluxlayer on a metal pad disposed on the destination substrate; separatingthe contact surface of the conformable transfer device from thesemiconductor device, thereby assembling the semiconductor device on thereceiving surface of the destination substrate such that the metalbackside surface of the semiconductor device at least partially contactsthe flux layer; and exposing the flux layer to heat, thereby securingthe metal backside surface to the metal pad.

In certain embodiments, thermally treating the flux layer comprisesexposing the flux layer to heat.

In certain embodiments, the flux layer is exposed to heat using aheating element.

In certain embodiments, the heating element is a hotplate.

In certain embodiments, the heating element is disposed on a side of thedestination substrate opposite the printable semiconductor device.

In certain embodiments, providing the semiconductor device formed on thenative substrate comprises providing the semiconductor device formed onthe native substrate with a polymer layer disposed on a top surface ofthe semiconductor device.

In certain embodiments, the destination substrate is a member selectedfrom the group consisting of polymer, plastic, resin, polyimide, PEN,PET, metal, metal foil, glass, a semiconductor, and sapphire.

In certain embodiments, the destination substrate has a transparencygreater than or equal to 50%, 80%, 90%, or 95% for visible light.

In certain embodiments, the native substrate comprises a member selectedform the group consisting of inorganic semiconductor material, singlecrystalline silicon wafers, silicon on insulator wafers, polycrystallinesilicon wafers, GaAs wafers, Si (1 1 1), InAlP, InP, GaAs, InGaAs,AlGaAs, GaSb, GaAlSb, AlSb, InSb, InGaAlSbAs, InAlSb, and InGaP.

In certain embodiments, providing the semiconductor device formed on thenative substrate comprises: forming the semiconductor device on thenative substrate; and encapsulating the printable semiconductor at leastin part with a polymer layer.

In certain embodiments, the semiconductor device formed on the nativesubstrate is encapsulated with a polymer layer.

In certain embodiments, the receiving surface of the destinationsubstrate comprises one or more non-planar topographical features.

In certain embodiments, the one or more non-planar topographic featurescomprise at least one member selected from the group consisting ofmesas, v-shaped channels, and trenches.

In certain embodiments, the semiconductor device has a polymer layerdisposed on a top surface of the semiconductor device.

In certain embodiments, the method includes, after contacting thesemiconductor device disposed on the contact surface with the receivingsurface of the destination substrate, heating, by a heating element, thepolymer layer.

In certain embodiments, the method includes, following separation fromthe native substrate and prior to contacting the semiconductor devicewith the receiving surface of the destination substrate, exposing toplasma a backside surface of the semiconductor device, opposite the topsurface of the semiconductor device.

In another aspect, the disclosed technology includes a conformabletransfer device with reduced crowning, the transfer device comprising: abulk volume having a first surface and a second surface, opposite thefirst surface, and a side between the first surface and the secondsurface, wherein the bulk area comprises a tapered surface connectingthe side to the first surface; and a plurality of printing postsdisposed on the first surface of the bulk volume for picking upprintable material, wherein the plurality of printing posts and the bulkvolume are arranged such that a force applied to the second surface ofthe bulk volume is transmitted to the plurality of printing posts.

In certain embodiments, an aspect ratio (height to width) of each postof the plurality of posts is less than or equal to 4:1 (e.g., from 2:1to 4:1).

In certain embodiments, each post of the plurality of printing postscomprises a contact surface on the end of the post opposite the firstsurface, wherein the contact surfaces of the plurality of posts aresubstantially in a same plane.

In certain embodiments, the thickness of plurality of printing posts isfrom 1 micron to 100 microns (e.g., from 1 to 5 microns, 5 to 10microns, 10 to 15 microns, 50 to 25 microns, 25 to 40 microns, 40 to 60microns, 60 to 80 microns, or 80 to 100 microns).

In certain embodiments, the thickness of the bulk volume is from 0.5 mmto 5 mm (e.g., from 0.5 to 1 mm, 1 to 2 mm, 2 to 3 mm, 3 to 4 mm, or 4to 5 mm).

In certain embodiments, the ratio of the thickness of the plurality ofprinting posts and the thickness of the bulk volume is from 1:1 to 1:10(e.g., from 1:1 to 1:2, 1:2 to 1:4, 1:4 to 1:6, 1:6 to 1:8, or 1:8 to1:10).

In certain embodiments, the bulk volume has a Young's modulus from 1 GPato 10 GPa (e.g., from 1 to 4 GPa, 4 to 7 GPa, 7 to 10 GPa).

In certain embodiments, the plurality of printing posts have a Young'smodulus from 1 MPa to 10 MPa (e.g., from 1 to 4 MPa, 4 to 7 MPa, 7 to 10MPa).

In certain embodiments, the plurality of printing posts have a firstYoung's modulus and the base has a second Young's modulus, greater thanthe first Young's modulus.

In certain embodiments, the bulk volume comprises a polymer having acoefficient of thermal expansion less than or equal to 14.5 ppm.

In certain embodiments, the plurality of printing posts occupy an areaselected from 10 cm² to 260 cm² (e.g., from 10 cm² to 40 cm², 40 cm² to80 cm², 120 cm² to 160 cm², 160 cm² to 200 cm², 200 cm² to 240 cm², or240 cm² to 260 cm²).

In certain embodiments, each printing post of the plurality of printingposts has at least one of a width, length, and height from 50 nanometersto 10 micrometers (e.g., 50 nm to 100 nm, 100 nm to 200 nm, 200 nm to400 nm, 400 nm to 600 nm, 600 nm to 800 nm, 800 nm to 1 micron, 1 micronto 5 microns, or 5 microns to 10 microns).

In certain embodiments, the plurality of printing posts are formed in acontinuous, unitary layer.

In certain embodiments, the plurality of printing posts comprises apolymer.

In certain embodiments, the bulk volume is Polydimethylsiloxane (PDMS).

In certain embodiments, the bulk volume and the plurality of printingposts are formed from a single material.

In certain embodiments, a least a portion of the posts are arranged onthe first surface from 1 mm to 15 mm away from a edge of the firstsurface (e.g., from 1 mm to 5 mm or 5 mm to 10 mm, 10 mm to 15 mm fromthe edge).

In certain embodiments, the bulk volume has a side surface between thefirst and second surfaces.

In certain embodiments, the side surface has a beveled and/or roundededge.

In certain embodiments, the side surface has a rounded profile (e.g.,convex or concave).

In certain embodiments, the side surface has a beveled edge forming anangle from horizontal (parallel to the first surface) of no greater than75° (e.g., no greater than 60°, no greater than 45°, no greater than30°, or no greater than 15°).

In another aspect, the disclosed technology includes a conformabletransfer device comprising an elastomer (e.g., PDMS) slab (e.g., bulkvolume) having a mesa configuration with a surface upon which aplurality of (e.g., array of) posts are disposed, wherein one or more ofthe following holds [any of (i), (ii), and/or (iii)]: (i) the edge ofthe mesa has a beveled and/or rounded edge so as to reduce distortion ofthe surface and allow accurate spacing of the plurality of posts; (ii)the plurality of posts are arranged on the surface at least 1 mm awayfrom the edge (e.g., from 1 mm to 5 mm or 5 mm to 20 mm from the edge);and (iii) the mesa has a thickness no greater than 10 mm (e.g., from 1to 5 mm).

In certain embodiments, the edge of the mesa has a beveled edge formingan angle from horizontal (parallel to the surface) of no greater than75° (e.g., no greater than 60°, no greater than 45°, no greater than30°, or no greater than 15°).

In certain embodiments, the edge of the mesa has a rounded profile(e.g., convex or concave).

In certain embodiments, the device includes a substrate (e.g., glass)upon which the elastomer slab is disposed.

In certain embodiments, an aspect ratio (height to width) of each postof the plurality of posts is less than or equal to 4:1 (e.g., from 2:1to 4:1).

In certain embodiments, each post of the plurality of printing postscomprises a contact surface on the end of the post opposite the firstsurface, wherein the contact surfaces of the plurality of posts aresubstantially in a same plane.

In certain embodiments, the thickness of the posts is from 1 micron to100 microns (e.g., from 1 to 5 microns, 5 to 10 microns, 10 to 15microns, 50 to 25 microns, 25 to 40 microns, 40 to 60 microns, 60 to 80microns, or 80 to 100 microns).

In certain embodiments, the thickness of the mesa is from 0.5 mm to 5 mm(e.g., from 0.5 to 1 mm, 1 to 2 mm, 2 to 3 mm, 3 to 4 mm, or 4 to 5 mm).

In certain embodiments, the ratio of the thickness of the plurality ofposts to the thickness of the mesa is from 1:1 to 1:10 (e.g., from 1:1to 1:2, 1:2 to 1:4, 1:4 to 1:6, 1:6 to 1:8, or 1:8 to 1:10).

In certain embodiments, the mesa has a Young's modulus from 1 GPa to 10GPa (e.g., from 1 to 4 GPa, 4 to 7 GPa, 7 to 10 GPa).

In certain embodiments, the posts have a Young's modulus from 1 MPa to10 MPa (e.g., from 1 to 4 MPa, 4 to 7 MPa, 7 to 10 MPa).

In certain embodiments, the posts have a first Young's modulus and themesa has a second Young's modulus, greater than the first Young'smodulus.

In certain embodiments, the posts have a Young's modulus from 1 MPa to 5MPa.

In certain embodiments, the mesa comprises a polymer having acoefficient of thermal expansion less than or equal to 14.5 ppm.

In certain embodiments, the posts occupy an area selected from 10 cm² to260 cm² (e.g., from 10 cm² to 40 cm², 40 cm² to 80 cm², 120 cm² to 160cm², 160 cm² to 200 cm², 200 cm² to 240 cm², or 240 cm² to 260 cm²).

In certain embodiments, each post of the posts has at least one of awidth, length, and height from 50 nanometers to 10 micrometers (e.g., 50nm to 100 nm, 100 nm to 200 nm, 200 nm to 400 nm, 400 nm to 600 nm, 600nm to 800 nm, 800 nm to 1 micron, 1 micron to 5 microns, or 5 microns to10 microns).

In certain embodiments, the posts are formed in a continuous, unitarylayer.

In certain embodiments, the posts comprises a polymer.

In certain embodiments, the mesa is Polydimethylsiloxane (PDMS).

In certain embodiments, the mesa and the posts are formed from a singlematerial.

In another aspect, the disclosed technology includes a conformabletransfer device, the transfer device including: a bulk volume having afirst surface and a second surface, opposite the first surface; a mesadisposed on the bulk volume; a layer comprising a plurality of posts(e.g., array of posts) disposed on the mesa, opposite the bulk volume,for picking up printable material, wherein the plurality of posts, themesa, and the bulk volume are arranged such that a force applied to thesecond surface of the bulk volume is transmitted to the plurality ofposts.

In certain embodiments, a thickness of the mesa is greater than athickness of the posts. In certain embodiments, an aspect ratio (heightto width) of each post of the plurality of posts is less than or equalto 4:1 (e.g., from 2:1 to 4:1).

In certain embodiments, each post of the plurality of printing postscomprises a contact surface on the end of the post opposite the firstsurface, wherein the contact surfaces of the plurality of posts aresubstantially in a same plane.

In certain embodiments, the thickness of the posts is from 1 micron to100 microns (e.g., from 1 to 5 microns, 5 to 10 microns, 10 to 15microns, 50 to 25 microns, 25 to 40 microns, 40 to 60 microns, 60 to 80microns, or 80 to 100 microns).

In certain embodiments, a thickness of the bulk volume is from 0.5 mm to5 mm (e.g., from 0.5 to 1 mm, 1 to 2 mm, 2 to 3 mm, 3 to 4 mm, or 4 to 5mm).

In certain embodiments, a ratio of a thickness of the posts to athickness of the bulk volume is from 1:1 to 1:10 (e.g., from 1:1 to 1:2,1:2 to 1:4, 1:4 to 1:6, 1:6 to 1:8, or 1:8 to 1:10).

In certain embodiments, the bulk volume has a Young's modulus from 1 GPato 10 GPa (e.g., from 1 to 4 GPa, 4 to 7 GPa, 7 to 10 GPa).

In certain embodiments, the posts have a Young's modulus from 1 MPa to10 MPa (e.g., from 1 to 4 MPa, 4 to 7 MPa, 7 to 10 MPa).

In certain embodiments, the posts have a first Young's modulus and thebulk volume has a second Young's modulus, greater than the first Young'smodulus.

In certain embodiments, the mesa has the first Young's modulus.

In certain embodiments, the mesa has the second Young's modulus.

In certain embodiments, the bulk volume comprises a polymer having acoefficient of thermal expansion less than or equal to 14.5 ppm.

In certain embodiments, the posts occupy an area selected from 10 cm² to260 cm² (e.g., from 10 cm² to 40 cm², 40 cm² to 80 cm², 120 cm² to 160cm², 160 cm² to 200 cm², 200 cm² to 240 cm², or 240 cm² to 260 cm²).

In certain embodiments, each post of the plurality of posts has at leastone of a width, length, and height from 50 nanometers to 10 micrometers(e.g., 50 nm to 100 nm, 100 nm to 200 nm, 200 nm to 400 nm, 400 nm to600 nm, 600 nm to 800 nm, 800 nm to 1 micron, 1 micron to 5 microns, or5 microns to 10 microns).

In certain embodiments, the posts are formed in a continuous, unitarylayer.

In certain embodiments, the posts comprise a polymer.

In certain embodiments, the bulk volume is Polydimethylsiloxane (PDMS).

In certain embodiments, the bulk volume and the posts are formed from asingle material.

In certain embodiments, a least a portion of the posts are arranged onthe first surface from 1 mm to 15 mm away from a edge of the firstsurface (e.g., from 1 mm to 5 mm or 5 mm to 10 mm, 10 mm to 15 mm fromthe edge).

In certain embodiments, the bulk volume has a side surface between thefirst and second surfaces.

In certain embodiments, the side surface has a beveled and/or roundededge.

In certain embodiments, the side surface has a rounded profile (e.g.,convex or concave).

In certain embodiments, the side surface has a beveled edge forming anangle from horizontal (parallel to the first surface) of no greater than75° (e.g., no greater than 60°, no greater than 45°, no greater than30°, or no greater than 15°).

In another aspect, the disclosed technology includes a method ofmodifying a conformable transfer device to reduce crowning, the methodcomprising providing a transfer device comprising: a bulk volume havinga first surface and a second surface, opposite the first surface, andone or more sides between the first surface and the second surface; aplurality of printing posts disposed on the first surface of the bulkvolume for picking up printable material, wherein the plurality ofprinting posts and the bulk volume are arranged such that a forceapplied to the second surface of the bulk volume is transmitted to theplurality of printing posts; and cutting an edge of the first surface ofthe bulk substrate at an non-zero angle with respect to the firstsurface, thereby reducing crowning at the edge.

In certain embodiments, an aspect ratio (height to width) of each postof the plurality of posts is less than or equal to 4:1 (e.g., from 2:1to 4:1).

In certain embodiments, each post of the plurality of printing postscomprises a contact surface on the end of the post opposite the firstsurface, wherein the contact surfaces of the plurality of posts aresubstantially in a same plane.

In certain embodiments, a thickness of plurality of printing posts isfrom 1 micron to 100 microns (e.g., from 1 to 5 microns, 5 to 10microns, 10 to 15 microns, 50 to 25 microns, 25 to 40 microns, 40 to 60microns, 60 to 80 microns, or 80 to 100 microns).

In certain embodiments, a thickness of the bulk volume is from 0.5 mm to5 mm (e.g., from 0.5 to 1 mm, 1 to 2 mm, 2 to 3 mm, 3 to 4 mm, or 4 to 5mm).

In certain embodiments, a ratio of a thickness of the plurality ofprinting posts and a thickness of the bulk volume is from 1:1 to 1:10(e.g., from 1:1 to 1:2, 1:2 to 1:4, 1:4 to 1:6, 1:6 to 1:8, or 1:8 to1:10).

In certain embodiments, the bulk volume has a Young's modulus from 1 GPato 10 GPa (e.g., from 1 to 4 GPa, 4 to 7 GPa, 7 to 10 GPa).

In certain embodiments, the plurality of printing posts have a Young'smodulus from 1 MPa to 10 MPa (e.g., from 1 to 4 MPa, 4 to 7 MPa, 7 to 10MPa).

In certain embodiments, the plurality of printing posts have a firstYoung's modulus and the bulk volume has a second Young's modulus,greater than the first Young's modulus.

In certain embodiments, the bulk volume comprises a polymer having acoefficient of thermal expansion less than or equal to 14.5 ppm.

In certain embodiments, the plurality of printing posts occupy an areaselected from 10 cm² to 260 cm² (e.g., from 10 cm² to 40 cm², 40 cm² to80 cm², 120 cm² to 160 cm², 160 cm² to 200 cm², 200 cm² to 240 cm², or240 cm² to 260 cm²).

In certain embodiments, each printing post of the plurality of printingposts has at least one of a width, length, and height from 50 nanometersto 10 micrometers (e.g., 50 nm to 100 nm, 100 nm to 200 nm, 200 nm to400 nm, 400 nm to 600 nm, 600 nm to 800 nm, 800 nm to 1 micron, 1 micronto 5 microns, or 5 microns to 10 microns).

In certain embodiments, the plurality of printing posts are formed in acontinuous, unitary layer.

In certain embodiments, the plurality of printing posts comprises apolymer.

In certain embodiments, the bulk volume is Polydimethylsiloxane (PDMS).

In certain embodiments, the bulk volume and the plurality of printingposts are formed from a single material.

In certain embodiments, a least a portion of the posts are arranged onthe first surface from 1 mm to 15 mm away from a edge of the firstsurface (e.g., from 1 mm to 5 mm or 5 mm to 10 mm, 10 mm to 15 mm fromthe edge).

In certain embodiments, the bulk volume has a side surface between thefirst and second surfaces.

In certain embodiments, the side surface has a beveled and/or roundededge.

In certain embodiments, the side surface has a rounded profile (e.g.,convex or concave). In certain embodiments, the side surface has abeveled edge forming an angle from horizontal (parallel to the firstsurface) of no greater than 75° (e.g., no greater than 60°, no greaterthan 45°, no greater than 30°, or no greater than 15°).

In another aspect, the disclosed technology includes a conformabletransfer device, the transfer device including: a bulk volume having afirst surface and a second surface, opposite the first surface; and aplurality of posts disposed on the first surface of the bulk volume forpicking up printable material, wherein each posts comprises a basesection and a top section, wherein the top section has a cross-sectionalarea smaller than that of the base section (e.g., less than 50%, 30%,25%, 10% of the cross-sectional area of the base section).

In certain embodiments, each of the plurality of posts comprises acontact surface on the end of the post opposite the first surface,wherein the contact surfaces of the plurality of posts are substantiallyin a same plane.

In certain embodiments, a thickness of posts ranges from 1 micron to 100microns (e.g., from 1 to 5 microns, 5 to 10 microns, 10 to 15 microns,50 to 25 microns, 25 to 40 microns, 40 to 60 microns, 60 to 80 microns,or 80 to 100 microns).

In certain embodiments, a thickness of the bulk volume is from 0.5 mm to5 mm (e.g., from 0.5 to 1 mm, 1 to 2 mm, 2 to 3 mm, 3 to 4 mm, or 4 to 5mm).

In certain embodiments, a ratio of a thickness of the posts to athickness of the bulk volume is from 1:1 to 1:10 (e.g., from 1:1 to 1:2,1:2 to 1:4, 1:4 to 1:6, 1:6 to 1:8, or 1:8 to 1:10).

In certain embodiments, the bulk volume has a Young's modulus from 1 GPato 10 GPa (e.g., from 1 to 4 GPa, 4 to 7 GPa, 7 to 10 GPa).

In certain embodiments, the posts have a Young's modulus from 1 MPa to10 MPa (e.g., from 1 to 4 MPa, 4 to 7 MPa, 7 to 10 MPa).

In certain embodiments, the posts have a first Young's modulus and abase has a second Young's modulus, greater than the first Young'smodulus.

In certain embodiments, the bulk volume comprises a polymer having acoefficient of thermal expansion less than or equal to 14.5 ppm.

In certain embodiments, the posts occupy an area selected from 10 cm² to260 cm² (e.g., from 10 cm² to 40 cm², 40 cm² to 80 cm², 120 cm² to 160cm², 160 cm² to 200 cm², 200 cm² to 240 cm², or 240 cm² to 260 cm²).

In certain embodiments, each post of the plurality of posts has at leastone of a width, length, and height from 50 nanometers to 10 micrometers(e.g., 50 nm to 100 nm, 100 nm to 200 nm, 200 nm to 400 nm, 400 nm to600 nm, 600 nm to 800 nm, 800 nm to 1 micron, 1 micron to 5 microns, or5 microns to 10 microns).

In certain embodiments, the posts are formed in a continuous, unitarylayer.

In certain embodiments, the posts comprise a polymer.

In certain embodiments, the bulk volume is Polydimethylsiloxane (PDMS).

In certain embodiments, the bulk volume and the posts are formed from asingle material.

In certain embodiments, an aspect ratio (height to width) of each postof the plurality of posts is less than or equal to 4:1 (e.g., from 2:1to 4:1).

In certain embodiments, the bulk volume has a side surface between thefirst and second surfaces.

In certain embodiments, the side surface has a beveled and/or roundededge.

In certain embodiments, the side surface has a rounded profile (e.g.,convex or concave).

In certain embodiments, the side surface has a beveled edge forming anangle from horizontal (parallel to the first surface) of no greater than75° (e.g., no greater than 60°, no greater than 45°, no greater than30°, or no greater than 15°).

In certain embodiments, a least a portion of the posts are arranged onthe first surface from 1 mm to 15 mm away from a edge of the firstsurface (e.g., from 1 mm to 5 mm or 5 mm to 10 mm, 10 mm to 15 mm fromthe edge).

In another aspect, the disclosed technology includes a conformabletransfer device, the transfer device including: a bulk volume having afirst surface and a second surface, opposite the first surface; aplurality of printing posts disposed on the first surface of the bulkvolume for picking up printable material; a plurality of anti-sag postsdisposed on the first surface of the bulk volume for preventing thefirst surface of the bulk volume from sagging and inadvertently pickingup printable material when printable material is picked up by theplurality of printing posts, wherein the plurality of printing posts andthe bulk volume are arranged such that a force applied to the secondsurface of the bulk volume is transmitted to the plurality of printingposts.

In certain embodiments, the plurality of printing posts and theplurality of anti-sag posts are disposed on a connecting layerpositioned between the plurality of printing posts and the plurality ofanti-sag posts.

In certain embodiments, the connecting layer comprises a thin metallayer.

In certain embodiments, each of the plurality of posts comprises acontact surface on the end of the post opposite the first surface,wherein the contact surfaces of the plurality of posts are substantiallyin a same plane.

In certain embodiments, a thickness of the printing posts is from 1micron to 100 microns (e.g., from 1 to 5 microns, 5 to 10 microns, 10 to15 microns, 50 to 25 microns, 25 to 40 microns, 40 to 60 microns, 60 to80 microns, or 80 to 100 microns).

In certain embodiments, a thickness of the bulk volume is from 0.5 mm to5 mm (e.g., from 0.5 to 1 mm, 1 to 2 mm, 2 to 3 mm, 3 to 4 mm, or 4 to 5mm).

In certain embodiments, a ratio of a thickness of the printing posts toa thickness of the bulk volume is from 1:1 to 1:10 (e.g., from 1:1 to1:2, 1:2 to 1:4, 1:4 to 1:6, 1:6 to 1:8, or 1:8 to 1:10).

In certain embodiments, the bulk volume has a Young's modulus from 1 GPato 10 GPa (e.g., from 1 to 4 GPa, 4 to 7 GPa, 7 to 10 GPa).

In certain embodiments, the printing posts have a Young's modulus from 1MPa to 10 MPa (e.g., from 1 to 4 MPa, 4 to 7 MPa, 7 to 10 MPa).

In certain embodiments, the printing posts have a first Young's modulusand the bulk volume has a second Young's modulus, greater than the firstYoung's modulus.

In certain embodiments, the bulk volume comprises a polymer having acoefficient of thermal expansion less than or equal to 14.5 ppm.

In certain embodiments, the printing posts occupy an area selected from10 cm² to 260 cm² (e.g., from 10 cm² to 40 cm², 40 cm² to 80 cm², 120cm² to 160 cm², 160 cm² to 200 cm², 200 cm² to 240 cm², or 240 cm² to260 cm²).

In certain embodiments, each of the printing posts has at least one of awidth, length, and height from 50 nanometers to 10 micrometers (e.g., 50nm to 100 nm, 100 nm to 200 nm, 200 nm to 400 nm, 400 nm to 600 nm, 600nm to 800 nm, 800 nm to 1 micron, 1 micron to 5 microns, or 5 microns to10 microns).

In certain embodiments, the printing posts are formed in a continuous,unitary layer.

In certain embodiments, the printing posts comprise a polymer.

In certain embodiments, the bulk volume is Polydimethylsiloxane (PDMS).

In certain embodiments, the bulk volume and the printing posts areformed from a single material.

In certain embodiments, the anti-sag posts are interspersed between theprinting posts.

In certain embodiments, the plurality of anti-sag posts have a greatermodulus than the printing posts.

In certain embodiments, an aspect ratio (height to width) of each postof the posts is less than or equal to 4:1 (e.g., from 2:1 to 4:1).

In certain embodiments, a least a portion of the posts are arranged onthe first surface from 1 mm to 15 mm away from a edge of the firstsurface (e.g., from 1 mm to 5 mm or 5 mm to 10 mm, 10 mm to 15 mm fromthe edge).

In certain embodiments, the bulk volume has a side surface between thefirst and second surfaces.

In certain embodiments, the side surfaces has a beveled and/or roundededge.

In certain embodiments, the side surface has a rounded profile (e.g.,convex or concave).

In certain embodiments, the side surface has a beveled edge forming anangle from horizontal (parallel to the first surface) of no greater than75° (e.g., no greater than 60°, no greater than 45°, no greater than30°, or no greater than 15°).

In another aspect, the disclosed technology includes a conformabletransfer device, the transfer device including: a bulk volume having afirst surface and a second surface, opposite the first surface; and aplurality of posts disposed on the first surface of the bulk volume forpicking up printable material, wherein the plurality of posts and thebulk volume are arranged such that a force applied to the second surfaceof the bulk volume is transmitted to the plurality of posts, wherein aportion of the area of the first surface unoccupied by the plurality ofposts comprises a roughened area (e.g., thereby anti-sagging).

In certain embodiments, the roughened area comprises a plurality offeatures, each feature having a width less than the width of each postand a height less than the height of each post.

In certain embodiments, the roughened area is located on the firstsurface between the posts.

In certain embodiments, the roughened area comprises a patterned arrayof features.

In certain embodiments, the roughened area comprises a random array offeatures.

In certain embodiments, each of the plurality of posts comprises acontact surface on the end of the post opposite the first surface,wherein the contact surfaces of the plurality of posts are substantiallyin a same plane.

In certain embodiments, a thickness of posts is from 1 micron to 100microns (e.g., from 1 to 5 microns, 5 to 10 microns, 10 to 15 microns,50 to 25 microns, 25 to 40 microns, 40 to 60 microns, 60 to 80 microns,or 80 to 100 microns).

In certain embodiments, a thickness of the bulk volume is from 0.5 mm to5 mm microns (e.g., from 0.5 to 1 mm, 1 to 2 mm, 2 to 3 mm, 3 to 4 mm,or 4 to 5 mm).

In certain embodiments, a ratio of a thickness of the posts and athickness of the bulk volume is from 1:1 to 1:10 (e.g., from 1:1 to 1:2,1:2 to 1:4, 1:4 to 1:6, 1:6 to 1:8, or 1:8 to 1:10).

In certain embodiments, the bulk volume has a Young's modulus from 1 GPato 10 GPa (e.g., from 1 to 4 GPa, 4 to 7 GPa, 7 to 10 GPa).

In certain embodiments, the posts have a Young's modulus from 1 MPa to10 MPa (e.g., from 1 to 4 MPa, 4 to 7 MPa, 7 to 10 MPa).

In certain embodiments, the posts have a first Young's modulus and thebulk volume has a second Young's modulus, greater than the first Young'smodulus.

In certain embodiments, the bulk volume comprises a polymer having acoefficient of thermal expansion less than or equal to 14.5 ppm.

In certain embodiments, the posts occupy an area selected from 10 cm² to260 cm² (e.g., from 10 cm² to 40 cm², 40 cm² to 80 cm², 120 cm² to 160cm², 160 cm² to 200 cm², 200 cm² to 240 cm², or 240 cm² to 260 cm²).

In certain embodiments, each of the posts has at least one of a width,length, and height from 50 nanometers to 10 micrometers.

In certain embodiments, the posts are formed in a continuous, unitarylayer.

In certain embodiments, the posts comprise a polymer.

In certain embodiments, the bulk volume is PDMS.

In certain embodiments, the bulk volume and the posts are formed from asingle material.

In certain embodiments, the conformable transfer device is avisco-elastomeric stamp.

In certain embodiments, the conformable transfer device is anelastomeric stamp.

In certain embodiments, the elastomer stamp is made ofPolydimethylsiloxane (PDMS).

In certain embodiments, an aspect ratio (height to width) of each postof the posts is less than or equal to 4:1 (e.g., from 2:1 to 4:1).

In certain embodiments, the posts are arranged on the first surface from1 mm to 15 mm away from a edge of the first surface (e.g., from 1 mm to5 mm or 5 mm to 10 mm, 10 mm to 15 mm from the edge).

In certain embodiments, the bulk volume has a side surface between thefirst and second surfaces.

In certain embodiments, the side surfaces has a beveled and/or roundededge.

In certain embodiments, the side surface has a rounded profile (e.g.,convex or concave).

In certain embodiments, the side surface has a beveled edge forming anangle from horizontal (parallel to the first surface) of no greater than75° (e.g., no greater than 60°, no greater than 45°, no greater than30°, or no greater than 15°).

In another aspect, the disclosed technology includes a conformabletransfer device, the transfer device including: a base comprising afirst material; a sub-base comprising a second material and disposed onthe base (e.g., wherein the sub-base has a smaller cross-sectional areathan the base); a bulk volume comprising a material different from thebase and the sub-base and disposed at least partly on the sub-base(e.g., and also at least partly at the base), wherein a thickness of aportion of the bulk volume that is disposed on the sub-base is less thana thickness of the sub-base; and a plurality of posts disposed on thebulk volume, opposite and above the sub-base, for picking up printablematerial, wherein the plurality of posts, the base, the sub-base, andthe bulk volume are arranged such that a force applied to a surface ofthe base opposite the sub-base is transmitted to the plurality of posts.

In certain embodiments, the first material comprises glass.

In certain embodiments, the first and second materials are the same.

In certain embodiments, the bulk volume and the plurality of posts areformed from a single material.

In certain embodiments, the bulk volume comprises a polymer.

In certain embodiments, the first material is transparent.

In certain embodiments, the second material is transparent.

In certain embodiments, each of the plurality of posts comprises acontact surface on the end of the post opposite the bulk volume, whereinthe contact surfaces of the plurality of posts are substantially in asame plane.

In certain embodiments, a thickness of the posts is from 1 micron to 100microns (e.g., from 1 to 5 microns, 5 to 10 microns, 10 to 15 microns,50 to 25 microns, 25 to 40 microns, 40 to 60 microns, 60 to 80 microns,or 80 to 100 microns).

In certain embodiments, a thickness of the bulk volume is from 0.5 mm to5 mm (e.g., from 0.5 to 1 mm, 1 to 2 mm, 2 to 3 mm, 3 to 4 mm, or 4 to 5mm).

In certain embodiments, a ratio of a thickness of the posts to athickness of the bulk volume is from 1:1 to 1:10 (e.g., from 1:1 to 1:2,1:2 to 1:4, 1:4 to 1:6, 1:6 to 1:8, or 1:8 to 1:10).

In certain embodiments, the bulk volume has a Young's modulus from 1 GPato 10 GPa (e.g., from 1 to 4 GPa, 4 to 7 GPa, 7 to 10 GPa).

In certain embodiments, the posts have a Young's modulus from 1 MPa to10 MPa (e.g., from 1 to 4 MPa, 4 to 7 MPa, 7 to 10 MPa).

In certain embodiments, the posts have a first Young's modulus and thebase has a second Young's modulus, greater than the first Young'smodulus.

In certain embodiments, the bulk volume comprises a polymer having acoefficient of thermal expansion less than or equal to 14.5 ppm.

In certain embodiments, the posts occupy an area selected from 10 cm² to260 cm² (e.g., from 10 cm² to 40 cm², 40 cm² to 80 cm², 120 cm² to 160cm², 160 cm² to 200 cm², 200 cm² to 240 cm², or 240 cm² to 260 cm²).

In certain embodiments, each post of the plurality of posts has at leastone of a width, length, and height from 50 nanometers to 10 micrometers(e.g., 50 nm to 100 nm, 100 nm to 200 nm, 200 nm to 400 nm, 400 nm to600 nm, 600 nm to 800 nm, 800 nm to 1 micron, 1 micron to 5 microns, or5 microns to 10 microns).

In certain embodiments, the posts are formed in a continuous, unitarylayer.

In certain embodiments, the posts comprise a polymer.

In certain embodiments, the bulk volume is Polydimethylsiloxane (PDMS).

In certain embodiments, the bulk volume has a greater modulus than theposts.

In certain embodiments, an aspect ratio (height to width) of each postof the posts is less than or equal to 4:1 (e.g., from 2:1 to 4:1).

In certain embodiments, a least a portion of the posts are arranged onthe first surface from 1 mm to 15 mm away from a edge of the firstsurface (e.g., from 1 mm to 5 mm or 5 mm to 10 mm, 10 mm to 15 mm fromthe edge).

In certain embodiments, the bulk volume has a side surface between thefirst and second surfaces.

In certain embodiments, the side surface has a beveled and/or roundededge.

In certain embodiments, the side surface has a rounded profile (e.g.,convex or concave).

In certain embodiments, the side surface has a beveled edge forming anangle from horizontal (parallel to the first surface) of no greater than75° (e.g., no greater than 60°, no greater than 45°, no greater than30°, or no greater than 15°).

In another aspect, the disclosed technology includes a conformabletransfer device, the transfer device including: a bulk volume having afirst surface and a second surface, opposite the first surface, whereinthe bulk volume has a first composition; a plurality of posts disposedon the first surface of the bulk volume for picking up printablematerial, wherein the plurality of posts, and the bulk volume arearranged so that a force applied to the second surface of the base bythe base is transmitted to the plurality of posts, wherein at least apart of (e.g., all of each post or a top portion of each post) each posthas a second composition different from the first composition.

In certain embodiments, at least a part of each post has the secondcomposition.

In certain embodiments, a bottom portion of each post closest to thebulk volume has the second composition.

In certain embodiments, the first composition comprises a polymer.

In certain embodiments, the second composition comprises a polymer.

In certain embodiments, the first composition comprises a hardener.

In certain embodiments, the second composition comprises a hardener.

In certain embodiments, the base is glass.

In certain embodiments, each post of the plurality of posts comprises acontact surface on the end of the post opposite the first surface,wherein the contact surfaces of the plurality of posts are insubstantially a same plane.

In certain embodiments, a thickness of the posts is from 1 micron to 100microns (e.g., from 1 to 5 microns, 5 to 10 microns, 10 to 15 microns,50 to 25 microns, 25 to 40 microns, 40 to 60 microns, 60 to 80 microns,or 80 to 100 microns).

In certain embodiments, a thickness of the bulk volume is from 0.5 mm to5 mm (e.g., from 0.5 to 1 mm, 1 to 2 mm, 2 to 3 mm, 3 to 4 mm, or 4 to 5mm).

In certain embodiments, a ratio of a thickness of the posts and athickness of the bulk volume is from 1:1 to 1:10 (e.g., from 1:1 to 1:2,1:2 to 1:4, 1:4 to 1:6, 1:6 to 1:8, or 1:8 to 1:10).

In certain embodiments, the bulk volume has a Young's modulus from 1 GPato 10 GPa (e.g., from 1 to 4 GPa, 4 to 7 GPa, 7 to 10 GPa).

In certain embodiments, the posts have a Young's modulus from 1 MPa to10 MPa (e.g., from 1 to 4 MPa, 4 to 7 MPa, 7 to 10 MPa).

In certain embodiments, the posts have a first Young's modulus and thebase has a second Young's modulus, greater than the first Young'smodulus.

In certain embodiments, the bulk volume comprises a polymer having acoefficient of thermal expansion less than or equal to 14.5 ppm.

In certain embodiments, the posts occupy an area selected from 10 cm² to260 cm² (e.g., from 10 cm² to 40 cm², 40 cm² to 80 cm², 120 cm² to 160cm², 160 cm² to 200 cm², 200 cm² to 240 cm², or 240 cm² to 260 cm²).

In certain embodiments, each post of the plurality of posts has at leastone of a width, length, and height from 50 nanometers to 10 micrometers(e.g., 50 nm to 100 nm, 100 nm to 200 nm, 200 nm to 400 nm, 400 nm to600 nm, 600 nm to 800 nm, 800 nm to 1 micron, 1 micron to 5 microns, or5 microns to 10 microns).

In certain embodiments, the posts are formed in a continuous, unitarylayer.

In certain embodiments, an aspect ratio (height to width) of each postof the plurality of posts is less than or equal to 4:1 (e.g., from 2:1to 4:1).

In certain embodiments, a least a portion of the posts are arranged onthe first surface from 1 mm to 15 mm away from a edge of the firstsurface (e.g., from 1 mm to 5 mm or 5 mm to 10 mm, 10 mm to 15 mm fromthe edge).

In certain embodiments, the bulk volume has a side surface between thefirst and second surfaces.

In certain embodiments, the side surface has a beveled and/or roundededge.

In certain embodiments, the side surface has a rounded profile (e.g.,convex or concave).

In certain embodiments, the side surface has a beveled edge forming anangle from horizontal (parallel to the first surface) of no greater than75° (e.g., no greater than 60°, no greater than 45°, no greater than30°, or no greater than 15°).

BRIEF DESCRIPTION OF THE FIGURES

The foregoing and other objects, aspects, features, and advantages ofthe present disclosure will become more apparent and better understoodby referring to the following description taken in conjunction with theaccompanying drawings.

FIGS. 1A through 1C are illustrations of heat-assistedmicro-transfer-printing with photoresist encapsulation.

FIGS. 2A and 2B are illustrations of heat-assisted printing ofsemiconductor elements onto a destination, non-native substrate havingtopographic features.

FIG. 3A is an SEM image of example semiconductor elements printed on anon-native substrate.

FIG. 3B is an SEM image of example semiconductor elements printed on anon-native substrate having topographic features.

FIG. 4 is an example diagram illustrating the application of plasma to acontact surface of the semiconductor elements.

FIG. 5A is an example diagram illustrating the application of plasma tothe contact surface of the semiconductor elements.

FIG. 5B is an illustration of metal-to-metal joining of thesemiconductor devices to the destination substrate after applying plasmato the contact surface of the semiconductor elements.

FIG. 6 is an example diagram illustrating application of plasma to thecontact surface of the semiconductor devices.

FIGS. 7A through 7D are examples of shapes of outputs of the plasmasource.

FIG. 8A through 8C are illustrations printing semiconductor elements toa destination substrate with a flux layer thereon.

FIGS. 9A through 9C illustrate a typical method of picking upsemiconductor elements.

FIGS. 10A and 10B illustrate an example of gravity-assisted separationof the semiconductor elements from the native substrate.

FIGS. 11A and 11B are diagrams illustrating another example ofgravity-assisted separation of the semiconductor elements from thenative substrate.

FIG. 12 is a diagram of an example transfer device with an array ofposts.

FIGS. 13A and 13B are illustrations of a typical transfer device and sagoccurring during compression.

FIGS. 14A and 14B are illustrations of a multi-tiered stamp.

FIG. 15 is an illustration of a multi-tiered stamp.

FIG. 16 is an illustration of a casting for forming a transfer devicewith multi-layer posts.

FIGS. 17A through 17C are SEM images of multi-layer posts configured inan array.

FIGS. 18 and 19 are diagrams of examples of the anti-sag features.

FIGS. 20A and 20B are diagrams that illustrate roughened areasincorporated on the transfer device between posts.

FIGS. 21A and 21B are illustrations of example composite transferdevices.

FIG. 22 is an illustration of crowning at the edge of the bulk material(e.g., PDMS layer) of a stamp.

FIG. 23 is an illustration of crowning occurring on a piece ofelastomer.

FIG. 24 is an illustration of an example transfer device withsignificant crowning.

FIG. 25 is an illustration of an example transfer device made withmultiple components to reduce crowning.

FIG. 26 is an illustration of an example transfer device with reducedcrowning.

FIG. 27 is an illustration of an example transfer device with reducedcrowning.

FIGS. 28A and 28B are illustrations of an example transfer device with amesa and an array of posts on the mesa.

FIG. 29 is an illustration of an example transfer device with reducedcrowning.

FIGS. 30A through 30B are illustrations of a method of reducing thecrowning on a transfer device.

FIGS. 31A through 31G illustration example sidewall profiles for usewith a transfer device.

FIG. 32 is a plot of the crowning height from the top surface of theelastomer as a function of the lateral position coordinate on the topsurface of the elastomer sidewall for each of the sidewall profilesshown in FIGS. 31A through 31G.

FIG. 33 is a plot of the crown height produced during formation oftransfer devices with the sidewall profiles shown in FIGS. 31A through31G.

The features and advantages of the present disclosure will become moreapparent from the detailed description set forth below when taken inconjunction with the drawings, in which like reference charactersidentify corresponding elements throughout. In the drawings, likereference numbers generally indicate identical, functionally similar,and/or structurally similar elements.

DETAILED DESCRIPTION OF THE INVENTION

As used herein the expression “semiconductor element” and “semiconductorstructure” are used synonymously and broadly refer to a semiconductormaterial, structure, device, or component of a device. Semiconductorelements include high-quality single crystalline and polycrystallinesemiconductors, semiconductor materials fabricated via high-temperatureprocessing, doped semiconductor materials, organic and inorganicsemiconductors, and composite semiconductor materials and structureshaving one or more additional semiconductor components ornon-semiconductor components, such as dielectric layers or materials orconducting layers or materials. Semiconductor elements includesemiconductor devices and device components including, but not limitedto, transistors, photovoltaics including solar cells, diodes,light-emitting diodes, lasers, p-n junctions, photodiodes, integratedcircuits, and sensors. In addition, semiconductor element can refer to apart or portion that forms a functional semiconductor device or product.

“Semiconductor” refers to any material that is a material that is aninsulator at a very low temperature, but which has an appreciableelectrical conductivity at temperatures of about 300 Kelvin. Theelectrical characteristics of a semiconductor can be modified by theaddition of impurities or dopants and controlled by the use ofelectrical fields. In the present description, use of the termsemiconductor is intended to be consistent with use of this term in theart of microelectronics and electronic devices. Semiconductors useful inthe present invention can include elemental semiconductors, such assilicon, germanium and diamond, and compound semiconductors, for examplegroup IV compound semiconductors such as SiC and SiGe, group III-Vsemiconductors such as AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP,InSb, InAs, InN, and InP, group III-V ternary semiconductors alloys suchas Al_(x)Ga1_(−x)As, group II-VI semiconductors such as CsSe, CdS, CdTe,ZnO, ZnSe, ZnS, and ZnTe, group I-VII semiconductors CuCl, group IV-VIsemiconductors such as PbS, PbTe and SnS, layer semiconductors such asPbI₂, MoS₂ and GaSe, oxide semiconductors such as CuO and Cu₂O. The termsemiconductor includes intrinsic semiconductors and extrinsicsemiconductors that are doped with one or more selected materials,including semiconductor having p-type doping materials and n-type dopingmaterials, to provide beneficial electronic properties useful for agiven application or device. The term semiconductor includes compositematerials comprising a mixture of semiconductors or dopants. Specificsemiconductor materials useful for in some applications of the presentinvention include, but are not limited to, Si, Ge, SiC, AlP, AlAs, AlSb,GaN, GaP, GaAs, GaSb, InP, InAs, GaSb, InP, InAs, InSb, ZnO, ZnSe, ZnTe,CdS, CdSe, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, PbS, Pb Se, PbTe, AlGaAs,AlInAs, AlInP, GaAsP, GalnAs, GaInP, AlGaAsSb, AlGaInP, and GaInAsP.Porous silicon semiconductor materials are useful for applications ofthe present invention in the field of sensors and light-emittingmaterials, such as light-emitting diodes (LEDs) and solid-state lasers.Impurities of semiconductor materials are atoms, elements, ions ormolecules other than the semiconductor material(s) themselves or anydopants provided in the semiconductor material. Impurities areundesirable materials present in semiconductor materials that cannegatively impact the electronic properties of semiconductor materials,and include but are not limited to oxygen, carbon, and metals includingheavy metals. Heavy-metal impurities include, but are not limited to,the group of elements between copper and lead on the periodic table,calcium, sodium, and all ions, compounds and/or complexes thereof.

“Substrate” refers to a structure or material on which, or in which, aprocess is (or has been) conducted, such as patterning, assembly orintegration of semiconductor elements. Substrates include, but are notlimited to: (i) a structure upon which semiconductor elements arefabricated, deposited, transferred or supported (also referred to as anative substrate); (ii) a device substrate, for example an electronicdevice substrate; (iii) a donor substrate having elements, such assemiconductor elements, for subsequent transfer, assembly orintegration; and (iv) a target substrate for receiving printablestructures, such as semiconductor elements. A donor substrate can be,but is not necessarily, a native substrate.

“Destination substrate” as used herein refers to the target substrate(also referred to as a non-native substrate) for receiving printablestructures, such as semiconductor elements. Examples of displaysubstrate materials include polymer, plastic, resin, polyimide,polyethylene naphthalate, polyethylene terephthalate, metal, metal foil,glass, flexible glass, a semiconductor, and sapphire.

Printable” relates to materials, structures, device components, orintegrated functional devices that are capable of transfer, assembly,patterning, organizing, or integrating onto or into substrates withoutexposure of the substrate to high temperatures (e.g. at temperaturesless than or equal to about 400, 200, or 150 degrees Celsius). In oneembodiment of the present invention, printable materials, elements,device components, or devices are capable of transfer, assembly,patterning, organizing or integrating onto or into substrates viasolution printing, micro-transfer printing, or dry transfer contactprinting.

“Printable semiconductor elements” of the present invention comprisesemiconductor structures that can be assembled or integrated ontosubstrate surfaces, for example by using dry transfer contact printing,micro-transfer printing, or solution printing methods. In oneembodiment, printable semiconductor elements of the present inventionare unitary single crystalline, polycrystalline or microcrystallineinorganic semiconductor structures. In the context of this description,a unitary structure is a monolithic element having features that aremechanically connected. Semiconductor elements of the present inventioncan be undoped or doped, can have a selected spatial distribution ofdopants, or can be doped with a plurality of different dopant materials,including p- and n-type dopants. The present invention includesmicrostructured printable semiconductor elements having at least onecross-sectional dimension greater than or equal to about 1 micron andnanostructured printable semiconductor elements having at least onecross-sectional dimension less than or equal to about 1 micron.Printable semiconductor elements useful in many applications compriseelements derived from “top down” processing of high-purity bulkmaterials, such as high-purity crystalline semiconductor wafersgenerated using conventional high-temperature processing techniques. Inone embodiment, printable semiconductor elements of the presentinvention comprise composite structures having a semiconductoroperationally connected to at least one additional device component orstructure, such as a conducting layer, dielectric layer, electrode,additional semiconductor structure, or any combination of these. In oneembodiment, printable semiconductor elements of the present inventioncomprise stretchable semiconductor elements or heterogeneoussemiconductor elements.

“Plastic” refers to any synthetic or naturally occurring material orcombination of materials that can be molded or shaped, generally whenheated, and hardened into a desired shape. Exemplary plastics useful inthe devices and methods of the present invention include, but are notlimited to, polymers, resins and cellulose derivatives. In the presentdescription, the term plastic is intended to include composite plasticmaterials comprising one or more plastics with one or more additives,such as structural enhancers, fillers, fibers, plasticizers, stabilizersor additives which can provide desired chemical or physical properties.

“Dielectric” and “dielectric material” are used synonymously in thepresent description and refer to a substance that is highly resistant toflow of electric current and can be polarized by an applied electricfield. Useful dielectric materials include, but are not limited to,SiO₂, Ta₂O₅, TiO₂, ZrO₂, Y₂O₃, SiN₄, STO, BST, PLZT, PMN, and PZT.

“Polymer” refers to a molecule comprising a plurality of repeatingchemical groups, typically referred to as monomers. Polymers are oftencharacterized by high molecular masses. Polymers useable in the presentinvention can be organic polymers or inorganic polymers and can be inamorphous, semi-amorphous, crystalline or partially crystalline states.Polymers can comprise monomers having the same chemical composition orcan comprise a plurality of monomers having different chemicalcompositions, such as a copolymer. Cross-linked polymers having linkedmonomer chains are particularly useful for some applications of thepresent invention. Polymers useable in the methods, devices and devicecomponents of the present invention include, but are not limited to,plastics, elastomers, thermoplastic elastomers, elastoplastics,thermostats, thermoplastics and acrylates. Exemplary polymers include,but are not limited to, acetal polymers, biodegradable polymers,cellulosic polymers, fluoropolymers, nylons, polyacrylonitrile polymers,polyamide-imide polymers, polyimides, polyarylates, polybenzimidazole,polybutylene, polycarbonate, polyesters, polyetherimide, polyethylene,polyethylene copolymers and modified polyethylenes, polyketones,poly(methyl methacrylate, polymethylpentene, polyphenylene oxides andpolyphenylene sulfides, polyphthalamide, polypropylene, polyurethanes,styrenic resins, sulphone based resins, vinyl-based resins or anycombinations of these.

“Micro-transfer printing” as used herein refers to systems, methods, andtechniques for the deterministic assembly of micro- and nano-materials,devices, and semiconductor elements into spatially organized, functionalarrangements with two-dimensional and three-dimensional layouts. It isoften difficult to pick up and place ultra-thin or small devices,however, micro-transfer printing permits the selection and applicationof these ultra-thin, fragile, or small devices, such as micro-LEDs,without causing damage to the devices themselves.

Microstructured stamps (e.g., elastomeric, electrostatic stamps, orhybrid elastomeric/electrostatic stamps) can be used to pick up microdevices, transport the micro devices to a destination substrate, andprint the micro devices onto the destination substrate. In someembodiments, surface adhesion forces are used to control the selectionand printing of these devices onto the destination substrate. Thisprocess can be performed massively in parallel. The stamps can bedesigned to transfer a single device or hundreds to thousands ofdiscrete structures in a single pick-up-and-print operation. For adiscussion of micro-transfer printing generally, see U.S. Pat. Nos.7,622,367 and 8,506,867, each of which is hereby incorporated byreference in its entirety.

Heat Assisted Micro-Transfer-Printing to Adhesiveless Surfaces andTopographic Surfaces

FIGS. 1A though 1C are illustrations of heat-assistedmicro-transfer-printing. The transfer device 102 (e.g., conformabletransfer device, such as an elastomer or visco-elastomer stamp (e.g.,polydimethylsiloxane (PDMS) stamp)) includes an array of posts 114 for(i) picking up printable semiconductor elements 104 from a nativesubstrate 108 (e.g., native to the printable semiconductor elements 104and used to fabricate the printable semiconductor elements 104) and (ii)transferring the printable semiconductor elements 104 to a non-native,destination substrate 110. In certain embodiments, the printablesemiconductor elements 104 are encapsulated in a polymer layer 106(e.g., photoresist) before they are picked up.

In certain embodiments, the printable semiconductor elements 104 arefabricated on, or from, a bulk semiconductor substrate. In suchembodiments, the non-native, destination substrate 110 is made of either(i) a non-semiconductor and/or non-metallic material (e.g., withconductive interconnectivity fabricated thereon) or (ii) one or moresemiconductor material of different types from the destinationsubstrate. Examples of non-native substrate 110 include, but not limitedto, glass, sapphire, plastics, metals and/or other semiconductors.Examples of native substrate 108 include, but not limited to, inorganicsemiconductor material such as single crystalline silicon wafers,silicon on insulator wafers, polycrystalline silicon wafers, GaAswafers, Si (1 1 1), InAlP, InP, GaAs, InGaAs, AlGaAs, GaSb, GaAlSb,AlSb, InSb, InGaAlSbAs, InAlSb, and InGaP.

FIG. 1A illustrates the transfer device 102 after having picked up theprintable semiconductor elements 104 from the native substrate 108, butbefore depositing the printable semiconductor elements 104 on thedestination substrate 110. In certain embodiments, the printablesemiconductor elements 104 are fabricated on the native substrate 108and then coated with the polymer layer 106 prior to the transfer device102 picking up the printable semiconductor elements 104 from the nativesubstrate 108. In certain embodiments, the polymer 106 is on a topsurface and sides of the printable semiconductor element 104. In certainembodiments, the polymer 106 is co-planar with the bottom of theprintable semiconductor element 104 such that both the polymer 106 andthe bottom of the printable semiconductor element 104 contact thedestination substrate 110 during printing as shown in FIG. 1B.

In certain embodiments, prior to the printable semiconductor elements104 being picked up from the native substrate 108, the polymer layer 106serves as an anchor or tether for the printable semiconductor element104 in that the layer 106 encapsulates the printable semiconductorelements 104 to maintain the printable semiconductor element 104 on thenative substrate 108. Example details of anchoring are described in U.S.patent application Ser. No. 14/743,988, filed Jun. 18, 2015 and entitledSystems and Methods for Controlling Release of TransferableSemiconductor Structures, which is incorporated by reference herein inits entirety. In certain embodiments, the polymer layer 106 is aphotoresist.

FIG. 1B illustrates the transfer device 102 transferring the printablesemiconductor elements 104 to the destination substrate 110. During thetransfer (e.g., printing process), the polymer layer 106, in certainembodiments, is situated between the transfer device 102 and theprintable semiconductor elements 104 and serves as the interface forseparation between the transfer device 102 and the destination substrate110 when the printable semiconductor elements 104 are picked up by thetransfer device 102. In certain embodiments, the polymer layers 106increase adhesion to the transfer device 102 during the pick-up of theprintable semiconductor elements 104 by the transfer device 102. Incertain embodiments, subsequent to the separation of the transfer device102 from the destination substrate 110, the polymer layer 106 issubsequently removed thereby leaving behind the transferred printablesemiconductor elements 104 on the destination substrate 110.

In certain embodiments, the transfer device 102 places the printablesemiconductor elements 104 and polymer layers 106 on the surface of thedestination substrate 110 and remains in that placement position for apre-defined time to allow the polymer layer 106 to flow, therebyseparating from, or having a reduced adhesion with, the transfer device102. After contacting the polymer 106 and the bottom of the printablesemiconductor element 104 to the destination substrate 110, the polymer106 can be heated (directly or indirectly). For example, in certainembodiments, a hot plate 112 is used to heat the destination substrate110. The hot plate 112, in certain embodiments, is in direct thermalcontact with the destination substrate 110. The destination substrate110 may be heated to an equilibrium temperature prior to the printablesemiconductor elements 104 being transferred to the substrate 110. Thisequilibrium temperature, for example, may be sufficient to cause thepolymer layer 106 to reflow (e.g., heat from the heating element reducesthe viscosity of the polymer layer 106 or causes the polymer layer 106to flow during said contact) thereby reducing the adhesion forcesbetween the transfer device 102 and the polymer layer 106. In certainembodiments, a non-contact thermal source is employed from a source thatdoes not make direct physical contact with the destination substrate110.

In certain embodiments, heating the polymer 106 facilitates printing.When a printable semiconductor element 104 is embedded in polymer 106 asshown in FIGS. 1A and 1B and the polymer 206 is heated, the polymer canflow, thereby facilitating printing (i.e., release of the printablesemiconductor element 104 from the transfer device 102). In certainembodiments, heat also causes the transfer device 102 itself (e.g., aviscoelastic transfer device, such as PDMS transfer device) to expandmore than the chip (due to CTE), thereby leading to shear forces betweenthe printable semiconductor element 104 and the transfer device 102 thatfacilitate printing.

FIG. 1C illustrates a micro-transfer-printed semiconductor elements 104on a destination, non-native substrate 110 after the polymer layers 106have been removed. For example, after printing, plasma ashing may beperformed to remove the polymer layers 106, thereby leaving behind thesemiconductor elements 104 printed on the destination substrate 110.

In certain embodiments, the destination substrate 110 includestopographic features 202 on the surface 204 of the destination substrate110 to contact with the printable semiconductor elements 104 and thepolymer layers 106. FIGS. 2A and 2B illustrate a heat-assistedmicro-transfer transfer device 102 for printing semiconductor elements104 onto a surface 204 of a destination, non-native substrate 110 havingtopographic features 202. In certain embodiments, the topographicfeatures are grooves, v-shaped channels, trenches, mesas, or canals. Thetopographic features may have varying depths and varying cross-sectionalareas. FIG. 2A shows the transfer device 102 placing the printablesemiconductor elements 104 with polymer layers 106 on the topographicfeatures 202 of the destination substrate 110. FIG. 2B shows theprintable semiconductor elements 104 situated on the topographicfeatures 202 of the destination substrate 110 after the polymer layers106 has been removed as explained in relation to FIGS. 1A through 1Cabove. In certain embodiments, it is difficult to print to topographicsurfaces 202 because less surface area on the bottom of the printablesemiconductor elements 104 contacts the destination substrate 110 due tothe topographic surface 202. The use of the polymer layer 106 asdescribed herein is beneficial when, among other things, printing todestination substrates 110 with topographic surfaces 202, as it reducesadhesion between the transfer devices and the polymer layer itself.Thus, the semiconductor elements 104 can be printed even though less ofthe surface of the destination substrate 110 contacts the semiconductorelements 104 during printing.

FIG. 3A is an SEM image of example semiconductor devices 304 printed ona non-native substrate 310. In the example, the devices 304 are InPdevices fabricated from an InP substrate. The non-native substrate 310is made of Si. In certain embodiments, a removal layer made of, forexample, InGaAs, is employed between the InP device 304 and the InP bulksubstrate to allow, or assist, in the separation of the device 304 fromthe native substrate.

FIG. 3B is a SEM image of an example semiconductor device 304 printed ona non-native substrate 310 with topographic features 302. As shown, anInP device 304 is printed on the surface of a Si destination substrate310. In this example, the topographic features 302 include U-shapedchannels formed on the surface of the destination substrate 310.

Plasma Treatment During Micro-Transfer-Printing

FIG. 4 is an example diagram illustrating plasma 402 being applied tothe contact surface 404 of the semiconductor elements 104 to be printedto the destination substrate 110. In certain embodiments, plasma 402 isapplied to the contact surface 404 of the semiconductor elements 104 tobe printed to the destination substrate 110 while the semiconductorelements 104 are on the transfer device 102. For example, plasma 402 canbe applied to bottom surfaces 404 of devices that are attached to anelastomer transfer device 102.

The plasma 402 treats the contact surface 404 of the semiconductorelements 104 to improve bonding between the semiconductor elements 104and the destination substrate 110. In certain embodiments, the plasma402 is used to clean the bottom surface 404 of devices that have beenfabricated using some method of epitaxial lift-off. For example, theplasma 402 cleans the contact surface 404 of semiconductor elements 104of an oxide layer formed at the contact surface 404. Removal of thinlayers of oxides from the contact surfaces 404 can be improved by addinga reducing gas (forming gas, ammonia, formic acid, etc.) to the plasma402. Semiconductor elements 104 that have been fabricated using certainmethods of epitaxial lift-off, for example, may form oxide layers atsurfaces that are exposed to an oxidizer (such as air). The plasma 402is of sufficient temperature to remove the thin layer of oxides from thecontact surface of the printable semiconductor element 104 with thedestination substrate 110. In certain embodiments, a reducing gas (e.g.,forming gas, ammonia, formic acid, etc.) is added into the plasma.

The plasma 402 can be applied to the semiconductor elements 104 in amanner in which the semiconductor elements 104 on the transfer device102 are un-distributed (i.e., do not fall off the stamp) while thetreatment is performed. Specifically, the plasma 402 is applied to thepopulated transfer device 102 in a manner to not cause a given printablesemiconductor element 104 to fall off the transfer device 102. Forexample, in certain embodiments in which the transfer device 102 has ahigh coefficient of thermal expansion (CTE), the temperature of thetransfer device 102 is maintained below a level that would causeshearing and delamination of the semiconductor elements 104 from thetransfer device 102. In this instance, once the semiconductor elements104 are on the transfer device 102, an uncontrolled release isundesired. Any heating of the stamp causes the transfer device 102 toeffectively grow (e.g., expand). In some instances, the transfer device102 grows more than the printable semiconductor element 104. This canleading to shear forces between the printable semiconductor element 104and the transfer device 102 that causes the semiconductor elements 104“drop” off the transfer device 102. However, in this instance, when theplasma 402 is applied to the populated transfer device 102, the shearforces and release of the printable semiconductor element 104 isundesired. A number of techniques can be used to maintain thetemperature of the transfer device 102 below a level that would causeshearing and delamination of the semiconductor elements 104 from thetransfer device 102. In certain embodiments, the duty cycle of theplasma output, the residence time (e.g., scan speeds of 0.5 to 5 mm/sec,0.5 to 1 mm/sec, 1 to 2 mm/sec, 2 to 5 mm/sec), the power of the plasma402 (e.g., 25-150 Watts or 80-100 Watts), and the distance (e.g., 0.5 to5 mm, 0.5 to 1 mm, 1 to 2 mm, 2 to 5 mm) between the plasma 402 to thebackside surface of the semiconductor elements 104 can be modulated tomaintain the temperature of the transfer device 102 below the desiredlevel (e.g., below 50, 75, or 100 degrees centigrade; e.g., below 50degrees centigrade with short peaks above 100 degrees centigrade). Forexample, in certain embodiments, the power of the plasma is 80 to 100Watts, the distance to the chip is 0.5 to 1 mm (e.g., 1 mm), and thescan speed is 0.5 to 1 mm/sec. This maintains the stamp at a desiredtemperature, such as below 50 degrees C. with short peaks above 100degrees C. In certain embodiments, room temperature plasma 402 is usedto keep the temperature of the transfer device 102 low enough to avoidthis type of failure mode (chips falling from the chip).

FIG. 5A is an example diagram illustrating plasma 402 being applied tothe contact surface 404 of the semiconductor elements 104 to be printedto the destination substrate 110. In certain embodiments, thesemiconductor elements 104 have a backside metal 504, the plasma 402 canbe used to remove oxides from the surface of the metal 504. Thisimproves metal-to-metal joining of the backside metal 504 on thesemiconductor elements 104 to the metal 506 on the destination substrate110 as shown in FIG. 5B. Examples of metal-to-metal materials for themetal 504 on the devices and the metal 506 on the destination substrate110 include, but are not limited to, Cu—Cu, CuSn—Cu, Cu—Sn—Sn—Cu, andAu—Au.

FIG. 6 is an example photomicrograph illustrating the application ofplasma 402 to the contact surface of the semiconductor devices.

FIGS. 7A though 7D are examples output shapes of the plasma source. Theshapes of the plasma outputs are shown as, but not limited to, a pointsource, a beam source, a narrow circular source, and a wide source.

FIG. 8A through 8C are illustrations of printing semiconductor elements104 having a metal layer-metal connection 808 on a destination substrate110. In certain embodiments, semiconductor elements 104 have a backsidemetal 802. The semiconductor elements 104 can be printed to adestination substrate 110 with mating metal pads 808 that have beencoated with a flux 806 before printing the semiconductor elements 104.The flux 806 can coat only the metal pads 808, the entire surface of thedestination substrate 110 with the metal pads 808 thereon, or a portion(including the metal pads 808) of the destination substrate 110 with themetal pads 808 thereon.

FIG. 8A is an illustration of a transfer device 102 with semiconductorelements 104 having a metal layer 802 disposed on the bottom of thesemiconductor elements 104. FIG. 8B is an illustration of semiconductorelements 104 printed to a destination substrate 110. The semiconductorelements 104 are printed onto metal pads 808 with flux 806 thereon. Theflux layer 806 is employed between the metal layer 802 of thesemiconductor elements 104 and the metal pads 808 on the destinationsubstrate 110. The removal of the flux reduces metal oxides on the metalpads 808, thereby leading to good joining or bonding between metals. Incertain embodiments, the flux 806 is a resin. In certain embodiments,the flux 806 is a no-clean flux or water-soluble flux. For example, incertain embodiments, the flux 806 can be removed using water (e.g., aheated water rinse).

In certain embodiments, the flux is an adhesive layer that containsreducing agents for removal of oxides. After the semiconductor elements104 are printed, the flux 806 can be reflowed thereby creating a goodmetal connection between metal pads 808 on the destination substrate 110and the backside metal 802 of the semiconductor elements 104.

A heating chamber or heating environment can be used to thermally treatthe printable semiconductor element 104 and the destination substrate110. The treatment causes the flux layer 804 to re-flow thereby allowingthe metal layer 802 to contact the metal contact pads 808 as shown inFIG. 8C.

Micro-Transfer-Printing with High Acceleration During Device Pickup

FIGS. 9A through 9C illustrate a typical method of picking upsemiconductor elements 104. As shown in FIG. 9A, the devices 904 areformed on their native substrate 108. In this example, the transferdevice 102 is brought into contact with the semiconductor elements 104as shown in FIG. 9B. The transfer device is then moved away (in anupward direction 902) from the source substrate 108, thereby temporarilyadhering the semiconductor elements 104 to the transfer device 102 asshown in FIG. 9C.

The methods described in relation to FIGS. 10A-B and FIGS. 11A-B can beused to increase (e.g., by 1 or more g) the initial acceleration (e.g.,to 5 to 100 g), thereby achieving higher velocities during the pick upprocess. The velocity at separation occurs at very small traveldistances (e.g., tens of microns or less) dependent on the compressionof the transfer device 102 at lamination. Higher acceleration can createhigher separation velocities at small distances that in turn increasesthe adhesion between the stamp and the source.

In certain embodiments, such as the transfer printing of an elasticstamp material, the transfer device 102 employs high-velocity separationbetween transfer device 102 and the source of the printable elements(e.g., semiconductor elements 104 and native substrate 108). It wasfound that higher acceleration can create higher separation velocitiesover a smaller distance and thus can increase the adhesion between thetransfer device 102 and the printable element (e.g., the printablesemiconductor element 104). To employ gravity to assist in theseparation, in certain embodiments, the source substrate 108 isconfigured to move in a downward direction to provide an additional 1 gof acceleration during the separation process.

In certain embodiments, the transfer device 102 is configured toaccelerate the source of the printable elements (e.g., the semiconductorelements 104 and native substrate 108) with an initial accelerationbetween 5 and 100 g. The initial acceleration allows the transfer device102 to achieve a higher velocity of the semiconductor elements 104 whenbeing picked up by the transfer device 102. The adhesion between a giventransfer device 102 and a given printable element (e.g., thesemiconductor elements 104) varies according to the speed of theseparation between the transfer device 102 and the native substrate 108due to the viscoelastic nature of the transfer device. To this end, whenthe transfer device 102 and the printable semiconductor element 104 aremoved away at a sufficient speed, the adhesion at the bond interfacebetween the transfer device 102 and the printable semiconductor element104 is sufficiently large to “pick up” the printable element (e.g.,printable semiconductor element 104) away from its native substrate 108.Conversely, when the transfer device 102 is moved at a slower speed, theadhesion at the bond interface between the transfer device 102 and theprintable semiconductor element 104 is low enough to “let go” or “print”the printable semiconductor element 104 onto the non-native, destinationsubstrate 110.

In certain embodiments, the separate occurs over a travel distance of(tens of microns or less). The separation distance may be a function ofthe compression of the transfer device 102 at lamination. In certainembodiments, the transfer device 102 employs a vertical stage that movesthe source (e.g., the printable semiconductor element 104 and the nativesubstrate 108) in the pick-up process.

FIGS. 10A and 10B illustrate an example of gravity-assisted separationof the semiconductor elements 104 from the native substrate 108. In thisexample, the transfer device 102 is brought into contact with thesemiconductor elements 104 as shown in FIG. 10A either by moving thetransfer device 102, moving the substrate 108, or a combination thereof.In this example, the arrangement and method utilize gravity to assistwith picking up the semiconductor elements 104 from the native substrate108. As shown, the native substrate 108 is configured to move in adownward direction 1002 during the separation. To this end, a higheracceleration is provided to the printable semiconductor element 104(e.g., due to moving with gravity) that is attached to the transferdevice 102 during the pick-up operation as shown in FIG. 10B.

FIGS. 11A and 11B illustrate another example of gravity-assistedseparation of the printable semiconductor element 104 from the nativesubstrate 108. As shown, the transfer device 102 is oriented below thesource substrate 108 and the semiconductor elements 104 are located onthe bottom of the source substrate 108 as shown in FIG. 11A. This can beaccomplished by forming the devices on the bottom of the substrate 108or flipping the substrate 108 with the semiconductor elements 104thereon after the semiconductor elements 104 are formed. The transferdevice 102 is moved in a downward direction 1102 during the separation,thereby picking up the semiconductor elements 104 so that they are onthe posts of the transfer device 102 as shown in FIG. 11B. Again, ahigher acceleration is provided to assist with picking up the printablesemiconductor element 104 (e.g., due to moving with gravity).

In certain embodiments, the method shown in FIGS. 10A and 10B and themethod shown in FIGS. 11A and 11B are combined such that both the sourcesubstrate 108 and the transfer device 102 are moved away from each other(in a vertical direction). In such embodiments, the separationacceleration is applied to both the source of the printable elements(e.g., the semiconductor elements 104 and the native substrate 108) andthe transfer device 102.

Transfer Devices Designed to Prevent Accidental Pick Up of Elements Dueto Sag

FIG. 12 is a diagram of an example transfer device 102 with posts 1202(e.g., an array of posts 1202). Typically, each post 1202 is arranged tocontact a given printable semiconductor element 104 to be picked up bythe transfer device 102. The posts 1202 may have varying ranges ofheights that depend, for example, on the size of the source (e.g., theprintable material such as the printable semiconductor element 104) tobe picked up by the transfer device 102. In certain embodiments, theposts 1202 include a cylindrical post, triangular post, rectangularpost, pentagonal post, hexagonal post, heptagonal post, and octagonalpost.

In certain embodiments, during the pick-up of the printablesemiconductor element 104 from the native substrate 108, the transferdevice 102 compresses the transfer device 102 against the source (e.g.,the printable semiconductor element 104 and the native substrate 108).The compression (e.g., in the z-direction), in certain embodiments,allows the lamination of the array of posts 1202 onto the printableelements on the source substrate. In addition, the compression allowsfor the critical velocity (for pick-up to occur) to be reached within asmaller clearance between the transfer device 102 and the printablesemiconductor elements 104. To this end, the transfer device 102 mayapply a smaller initial acceleration. In certain embodiments, thetransfer device 102 sags during compression in the pickup phase of theprint cycle. The sag may cause inadvertent pickup of semiconductorelements 104.

FIG. 13A illustrates a transfer device 1302 (e.g., the same as orsimilar to the transfer device shown in FIG. 12) and FIG. 13Billustrates sag 1304 occurring during compression of the transfer device1302 (e.g., during pickup). This sag 1304 causes unwanted materials tobe picked up from the source substrate. The array of printablesemiconductor devices (not shown) on the native substrate 1306 may bedenser than the posts 1308 on the transfer device 1302 such that duringan individual transfer (e.g., a single pick up and print) printabledevices are intentionally left on the native substrate 1306. However, ifthe sag 1304 is large enough, the sag 1304 can contact the printablesemiconductor devices resulting in unintentional pick-up of thesedevices. A variety of solutions for reducing (or eliminating) thelikelihood of unintentional pick-up of devices due to sag are disclosedherein, including transfer devices with multi-tiered posts, anti-sagposts, or both.

Transfer Devices with Multi-Tiered Posts

FIGS. 14A and 14B illustrate an example multi-tiered post 1400. Incertain embodiments, a multi-tiered post can be used to eliminate (orreduce) the problems with sag described above in relation to FIGS. 13Aand 13B. As shown in FIG. 14B compared to FIG. 13B, even if the transferdevice in FIG. 14B experiences the same amount of sag 1404 as thetransfer device in FIG. 13B (sag 1304), the sag 1404 of the transferdevice shown in FIG. 14B will not pick up semiconductor devices due tothe multi-tiered structure increasing the overall height of the postwhile maintaining the appropriate aspect ratio for the portion of thepost (e.g., micro-post) that will interface with the printable device.

As shown in FIG. 14A, in certain embodiments, each post 1422 includes abase post 1412 and a micro-post 1410. The base post 1412 is wider thanthe micro-post 1410. In certain embodiments, the desired aspect ratiofor each base post 1412 and each micro-post 1410 is less than 4:1 (e.g.,between 4:1 and 2:1). For example, a base post 1412 can have a 20-micronwidth and 80-micron height and the micro-post 1410 can have a 5-micronwidth and a 20-micron height. Thus, the resulting multi-layer post has a20-micron width and 100-micron height that is capable of picking up5-micron devices. The base post 1412 can have, for example, a width of5, 10, 15, 201, 25, 30, or 40 microns and a height of 10, 15, 20, 25,30, 40, 50, 60, 70, 80, 90, 100, 110, 120, 130, 140, 150, or 160microns. The micro-post 1410 can have, for example, a width of 1, 2, 3,4, 5, 10, or 15 microns and a height of 2, 4, 6, 8, 10, 15, 20, 25, 30,40, 50, or 60 microns.

FIG. 15 is an illustration of a transfer device 1500 with multi-tieredposts 1522. In this example, the micro-post 1510 is made of aviscoelastic material with a lower Young's modulus than the post 1512and bulk area 1502 which are both made from the same viscoelasticmaterial (i.e., having a higher Young's modulus than the micro-post).Utilizing a lower Young's modulus in the micro-posts 1510 allowsprintable device pick up to be tuned accordingly. The micro post 1510(or posts if this techniques is applied to a transfer device withoutmulti-tiered posts) can be tuned to pick up printable devices while thebulk volume 1502 has a higher Young's modulus, reducing the likelihoodthat the bulk area 1502 unintentionally picks up printable devicesduring a print operation. In certain embodiments, the entire post 1522is formed of a viscoelastic material with a lower Young's modulus thanthe bulk area 1502.

FIG. 16 is an illustration of a casting for a multi-tiered transferdevice (e.g., transfer device 1400 or 1500). In certain embodiments,multi-layer posts 1602 (i.e., including micro-post 1610 and post 1612)are generated using a multiple tiered master 1604 with multiple layers1614, 1606, 1608. These layers can have different thicknesses and can beof different materials. The base 1614 is the layer on which the masteris fabricated. In certain embodiments, the base 1614 is a silicon wafer.The layers 1606 and 1608, in certain embodiments, are polymer layers(e.g., photo-imagable polymer materials) and can be formed usingspin-coating and photolithography techniques. The multi-tiered master1604 can be used to form transfer devices, such as those shown in FIGS.14A-14B and FIG. 15, with micro-posts for picking up smaller printableobjects while maintaining aspect ratios comparable to a standard-sizedbase post.

In certain embodiments, the post 1602 includes a base post 1612 and amicro-post 1610. The base post 1612 is wider than the micro-post 1610.The base post 1612 allows the micro-post 1610 to have smallercross-sectional area for contacting small printable devices, whileallowing the transfer device to maintain a given post aspect ratio. Inother embodiments, each base post 1612 includes an array of micro-posts1610 thereon.

In certain embodiments, the transfer device is comprised of a singlesheet of glass and a bulk volume of polymer. The transfer device iscasted against a standard silicon wafer with either an image-ablematerial covering the silicon allowing for a pattern to be generated.The silicon wafer is referred to as the master.

In certain embodiments, the glass transfer device and silicon master areadvantageously configured such that the CTE variation between the twomaterials are minimized, or eliminated, during, for example, the curestep which is performed at elevated temperatures. The CTE matchingallows the amount of pull back at the edge of the transfer device 102 tobe decreased, thereby reducing the amount of crowning that can form atthe edge of the bulk region, as well as decrease the any kind ofthrough-out issues noted from post to post. In certain embodiments, aroom temperature cure is employed to minimize the pullback at the edgeof the transfer device. In certain embodiments, the transfer device 102is formed of a composite structure as explained below. A secondmaterial, for example, can be employed below a thin layer of the polymerlayer (e.g., to reduce crowning).

An example of multi-tiered posts is shown in FIGS. 17A-17C. FIGS.17A-17C are SEM images of multi-layer posts 1702 configured in an array.The posts 1702 may be made of PDMS or other viscoelastic materials. Insome embodiments, the posts 1702 and the bulk volume 1702 are formed ofthe same material. In other embodiments, the micro-posts 1710 can beformed of a material with a lower Young's modulus than the base posts1712 and the bulk volume 1702. In other embodiments, the micro-posts1710 and the base posts 1712 can be formed of a material with a lowerYoung's modulus than the bulk volume 1702. Embodiments includingmulti-material multi-tiered posts can be accomplished, for example, byselective deposition of the materials into the cast shown in FIG. 16.For example, material can be screen printed into the micro-post 1610regions of the cast followed by injection molding of the higher Young'smodulus material on top (e.g., in the base post 1612) and bulk volumearea 1702.

In certain embodiments, multi-tiered posts are also used to solve issuesrelated to crowning on the bulk volume as described below. The use ofthe multi-tier as explained above allows the multi-tiered post to betaller (e.g., taller than the crown on the bulk volume) while stillmaintaining the appropriate aspect ratio(s) and enabling the transfer ofsmall devices (e.g., due to the small contact surface area of themicro-post).

Transfer Devices with Anti-Sag Features

Examples of the anti-sag features 1802 are illustrated in FIGS. 18 and19. In certain embodiments, to minimize or prevent sagging of thetransfer device 102 between the posts (e.g., posts 1202 as shown in FIG.12), the transfer device 102 includes anti-sag features 1802. Theanti-sag features 1802 prevent the bulk volume from sagging during thecompression of the transfer device 102, thereby preventing theinadvertent pick-up of unintended or unwanted material (e.g.,semiconductor elements 104 not selected for pick-up or debris located atthe surface of the native substrate 108) from the surface of the nativesubstrate 108. The anti-sag features 1802 thus operate to improve theselectivity of the transfer device 102.

As shown in FIG. 18, the transfer device 102 includes one or moreanti-sag features 1802 that can contact anti-sag regions on the surfaceof the source substrate 108 between printable regions during a pick upoperation. Posts 1806 will pick up printable devices during a pick upoperation. Regions 1808 of the stamp contact no posts 1806 or anti-sagposts 1802. These regions 1808 correspond to locations on the sourcesubstrate where printable devices are located (or where previouslylocated if they have already been picked up. The compressibility and/orsize of the anti-sag features 1802 are insufficient to pick-up theprintable objects (e.g., the printable semiconductor element 104) andprevent the bulk volume of the transfer device 102 from sagging andtouching the printable substrate.

The anti-sag features 1802 are disposed in the anti-sag regions betweenregions 1808 and regions with posts 1806. In certain embodiments, theanti-sag features 1802 have a lower aggregate cross-section area ofcontact than the array of pickup post 1806 of the transfer device 102.

The anti-sag features 1802 may be of any size or shape. In certainembodiments, the anti-sag features 1802 are of the same height as theposts 1806. In certain embodiments, the anti-sag features are tallerthan the posts 1806. The anti-sag features may be shaped, for example,as a cylindrical post, triangular post, rectangular post, pentagonalpost, hexagonal post, heptagonal post, and octagonal post.

FIG. 19 is a diagram of an example transfer device 102 that includesanti-sag features 1802 to contact printable regions on the source (e.g.,the semiconductor elements 104 and the native substrate 108). Theanti-sag posts 1802 in FIG. 19 in the same location as those shown inFIG. 18 as well as the regions 1808. Thus, some of the anti-sag posts1802 will contact locations on the native substrate where printableobjects are located or were previously located. In certain embodiments,the anti-sag features 1802 are small enough that they have no pick-upcapability. In certain embodiments, the anti-sag features 1802 have acompressibility insufficient to have pick-up capability.

Transfer Devices with Roughened Areas Between Posts

In certain embodiments, to minimize or prevent the inadvertent pickup ofprintable material or undesired material from the source, the transferdevice 102 includes a roughened field in the area located between thetransfer device posts 114.

FIGS. 20A and 20B are diagrams that illustrate example roughened areas2002 incorporated on the transfer device 102. A roughened field 2002 isadded to the area of the transfer device 102 in between the transferdevice posts 104. This roughened area 2002 will help to prevent pick ofprintable material if there is sag between the process posts 104. Thearea 2002 can be comprised of small features that may be placed in aspecific pattern array or a random pattern array. In certainembodiments, the roughened field 2002 includes features that are smallerthan the transfer device posts 104. For example, in certain embodiments,the roughened features may include cylindrical structures, prismsstructures, concave structures, and frusto-conical structures. Incertain embodiments, the roughened fields 2002 are placed in a uniformor regular patterned array. In other embodiments, the roughened fields2002 are placed in a random patterned array.

Composite Transfer Devices

FIG. 21A illustrates a composite transfer device 2100 and FIG. 21Billustrates a composite transfer device 2150. Composite transfer devices(e.g., 2100 and 2150) can be constructed using different visco-elasticmaterials in various portions of the transfer device. For example, PDMShas a tunable Young's modulus tuned by controlling the cure temperatureor by changing the amount of curing agent in the resin. The polymerformation could include several different materials used together or itcould include a different ratio of polymer and hardener. Further,materials A & B can have different crosslink densities.

In certain embodiments, the transfer device 2100 is made of a compositematerial in which a second polymer formation is employed in the posts2104 to improve the adhesion between a given transfer device 2100 and aprintable element (e.g., printable semiconductor element 104). Further,a different polymer formation for the bulk transfer device allows forless adhesion in the event sag occurs between posts, thereby allowingsag while not picking up printable objects. For example, visco-elasticpolymers or visco-elastic elastomers may be used in either the post 2104or the bulk volume 2102. The posts 2104, in certain embodiments, have alower Young's modulus compared to the bulk volume 2012.

In certain embodiments, the post 2104 includes a base 2106 that has ahigher Young's modulus than the post 2104. The base 2106 may have thesame Young's modulus as the bulk area 2102 as shown in FIG. 21B.

Typically, a transfer device is composed of a single sheet of glass anda bulk volume of polymer. The transfer device is cast against a standardsilicon wafer with an imagable material (e.g., patterned photoresist orother photo-imagable polymers such as SU8 or BCB) covering the siliconallowing for a master pattern to be generated. Both the glass and thepolymer can be optimized so that the CTE variation between the two canbe reduced or eliminated during the cure step at elevated temperatures.This decreases the amount of pull back at the edge of the transferdevice which reduces the amount of crowning noted at the edge of thebulk region and decreases differences from post to post. A roomtemperature cure can also minimize the pullback at the edge of thetransfer device.

Transfer Devices with Reduced Crown

FIG. 22 is an illustration of crowning 2202 at the edge 2204 of the bulkvolume 2206 (e.g., PDMS layer) of a transfer device. The bulk volume2206 (e.g., PDMS layer in this example) may take on various shapes andforms. In certain embodiments, the bulk volume 2206 is cylindrical,triangular, rectangular, pentagonal, hexagonal, heptagonal, or octagonalin shape. The crowning 2202 may be caused by a mismatch in thecoefficients of thermal expansion (CTE) between the bulk volume 2206 andthe hard-plate interface 2208 (e.g., glass in this example).

FIG. 23 is an illustration of crowning 2202 occurring on the bulk volume2206 (e.g., visco-elastic material). FIG. 23 is a cross-sectional viewof half of the bulk volume 2206 of a transfer device. For the purposesof this illustration, the posts are omitted. In certain embodiments, asthe bulk volume 2206 cools on the hard-plate interface 2208 (e.g., glasssubstrate), the bulk volume 2206 distorts. This is particularlyprevalent towards the edges (e.g., edge 2204) of the bulk volume 2206.The distortion can cause a crown 2202 to form on the top of theelastomer 2206 as shown in FIGS. 22 and 23. The crowning 2202 creates aproblem because it can itself unintentionally pick up devices during thetransfer process.

As shown in FIG. 24, the crowning 2202 can be taller than the posts2402. Additionally, the distortion occurs in the x and y direction aswell (i.e., lateral distortion). As such, it is undesirable to have theposts positioned on the area of the bulk volume 2206 where the lateraldistortion will occur as the spacing of the posts 2402 may change whenthe distortion occurs (i.e., the spacing of the posts must be known andcontrolled to ensure that printing occurs properly). A typical distance“d” that the post array would be positioned away from the edge of thebulk volume 2206 to avoid lateral distortions is 5 to 20 millimeters.

Transfer Devices with a Composite Structure

FIG. 25 is an illustration of an example transfer device 2500 with acomposite structure. Typically, the transfer device 2500 is comprised ofa single sheet of glass 2208 (other materials may be used for thehard-plate interface 2208 besides glass) and a bulk volume ofviscoelastic material (e.g., PDMS). In certain embodiments, anadditional material layer 2514 is added between the glass plate 2208 andthe visco-elastic material 2506 to allow for a thin layer 2518 ofvisco-elastic material 2506 to be formed on top of the additional layer2514. The thin layer 2518, for example, may enable the transfer device2500 to be fabricated with less crowning at the edges as there is lessmaterial at the edge to form the crown.

The second material 2514, in certain embodiments, is permanently bondedto the first material 2208. The second material 2514 may be transparent,thereby allowing for a clearer image to be viewed through the transferdevice 2500. The second material 2514 allows the use of a thinner bulkmaterial, thereby allowing the transfer device 2500 to employ lesscompression to fully laminate the printable area.

In certain embodiments, a glass disc is used as the second material 2514between the hard-plate interface 2208 (e.g., glass) and the transferdevice bulk volume 2506. The second material 2514 can be any size orshape. In certain embodiments, the array of micro-posts 2520 aredisposed over the area of the second material 2514.

FIGS. 26 and 27 are illustrations of example transfer devices formed ofa composite structure with reduced crowning. Reducing the volume(thickness) of the elastomer below the posts leads to smaller distortionregions (crown and lateral). FIG. 26 is a cross section view of half ofa transfer device. As compared to FIG. 23, the transfer device in FIG.26 has less crowning due to the use of the second material 2514 asexplained above. As shown in FIG. 27, the crown 2702 is smaller than thecrown shown in FIG. 24 and is smaller than the posts 2720 of thetransfer device 2700. In this example, the distance “d” can be reducedto 1 to 5 millimeters. Additionally, the lateral distortion is less.

Transfer Device Mesa Around the Array of Posts

FIGS. 28A and 28B are illustrations of an example transfer device mesa2806 with an array of posts 2804 formed thereon. Due to the smaller postsizes needed to pick up small printable objects, the height of thetransfer device post is decreased in order to adhere to desired postaspect ratios. As explained above, if the length of the post (e.g.,1202) is too large relative to its width, the post will bend duringcompression (e.g., when picking up a device). However, crowning on theedge of the transfer device may cause devices to be picked upunintentionally if the length of the post relative to its width is suchthat it does not bend appropriately during compression (e.g., a desiredpost aspect ratio). A mesa 2806 has been developed around the transferdevice array 2804 that allows for a smaller portion of the transferdevice to be exposed to the wafer surface. The mesa material can allowfor a large step between the array 2804 and the bulk layer 2808. Incertain embodiments, the thickness of the mesa 2806 is greater than theheight of crowning on the bulk material 2808. This eliminates (orsignificantly reduces) the risk that the crowning on the bulk material2808 will unintentionally pick up devices during the transfer process.Additionally, in certain embodiments, the thickness of the mesa 2806 isless than the thickness of the bulk material 2808. As such, the crowningon the mesa 2806 (if any) is smaller than that of the crowning on thebulk material 2808.

The mesa 2806 can be any shape, as long as it encompasses the entiretransfer device array 2804. The transfer device mesa 2806 may befabricated on a bulk volume of polymer 2808 which itself is on a singlesheet of glass 2802.

FIG. 29 is an illustration of an example transfer device 2900 withreduced crowning 2920. A mesa 2806 is positioned around/below the posts2804. The thickness of the mesa 2806 is less than the thickness of thebulk volume 2808 (e.g., due to the thickness of the mesa 2806 and theheight of the posts 2804). As such, the crowning 2920 on the mesa 2806(if any) is smaller than that of the crowning 2930 on the bulk material2808. The thickness of the mesa 2806 is such that the posts 2804 areprominent over both the crowning 2920 on the mesa 2806 and the crowning2930 on the bulk volume 2808. Thus, the risk of accidentally picking updevices by the crowning 2920 and 2930 is reduced or eliminated.

Transfer Devices with the Crown at Least Partially Removed

To reduce the crowning effect, the edges 1504 may be partially removedto produce an angled edge. FIGS. 30A and 30B are illustrations of amethod of reducing the crowning 2202 on the bulk material 2206 as shownfrom a side/cross-sectional view of the transfer device. Angling cuts3002 can be made to the edge 2204 of the transfer device to reduce theamount of crowning (e.g., that is formed when transfer devices are castand as the PDMS pulls towards the center of the transfer devicematerial). The cuts 3002 may be made using a razor 3004. These cuts 3002may be made around the edge 2204 of the transfer device at regularintervals to significantly reduce the amount of crowning 2202 present.In certain embodiments, this reduces or eliminates the chance that thebulk material 2206 of the stamp will touch down at the edge of thetransfer device before the array is fully laminated.

Transfer Device Sidewall Shapes

In certain embodiments, the shape of the elastomer sidewall may be usedto control the distortions around the edge of the stamp. Finite elementmodeling was performed to understand how the shape of the elastomersidewall affects the distortions around the edge of the stamp. In theexample described below, a 1 mm thick, 20 mm broad slab of PDMS on 3 mmof glass, in plane strain was used. The CTE of the glass was 7 ppm/K andthe CTE of PDMS was 300 ppm/K. The delta T was 333 K (cure temp) to 295K(lab temp). The bevel (i.e., sidewall) of the PDMS slab was varied. Atransfer device with each of the following bevels/sidewalls was tested:15-degree bevel, 30-degree bevel, 45-degree bevel, 60-degree bevel,75-degree bevel, round bevel, elongated round bezel, and the squarebevel as shown in FIGS. 31A through 31G.

FIG. 32 is a plot of the crowning height from the top surface of theelastomer as a function of the lateral position coordinate on the topsurface of the elastomer sidewall as for each of the sidewall profilesshown in FIGS. 31A through 31G. FIG. 33 is a plot of the crown heightproduced during formation of transfer devices with the sidewall profilesshown in FIGS. 31A through 31G.

This analysis illustrated sidewall shapes that result in reducedcrowning. As shown in FIGS. 32 and 33, the 15-degree bevel, 30-degreebevel, 45-degree bevel, 60-degree bevel, 75-degree bevel, round bevel,and elongated round bezel all had less crown than the square bevel.

In certain embodiments, features of different transfer devices discussedabove are combined into a single transfer device. For example, atransfer device may include one or more anti-crown features, one or moresag pickup reduction features, etc. Furthermore, methods disclosedherein may be combined into a single method. For example, a method mayinclude plasma treating the semiconductor elements and heat-assistedprinting.

Having described various embodiments of the disclose technology, it willnow become apparent to one of skill in the art that other embodimentsincorporating the concepts may be used. It is felt, therefore, thatthese embodiments should not be limited to the disclosed embodiments,but rather should be limited only by the spirit and scope of thefollowing claims.

Throughout the description, where apparatus and systems are described ashaving, including, or comprising specific components, or where processesand methods are described as having, including, or comprising specificsteps, it is contemplated that, additionally, there are apparatus, andsystems of the disclosed technology that consist essentially of, orconsist 10 of, the recited components, and that there are processes andmethods according to the disclosed technology that consist essentiallyof, or consist of, the recited processing steps.

It should be understood that the order of steps or order for performingcertain action is immaterial so long as the disclosed technology remainsoperable. Moreover, two or more steps or actions may be conductedsimultaneously.

1-74. (canceled)
 75. A method for assembling a semiconductor device on areceiving surface of a destination substrate, the method comprising:providing the semiconductor device formed on a native substrate;providing a conformable transfer device having a contact surface;contacting the semiconductor device with the conformable transfer devicein a vertical direction, wherein contact between the contact surface andthe semiconductor device at least temporarily binds the semiconductordevice to the conformable transfer device; moving the lower of theconformable transfer device and the native substrate downward toseparate the semiconductor device from the native substrate so that thesemiconductor device is disposed on the contact surface of theconformable transfer device and is released from the native substrate;contacting the semiconductor device disposed on the contact surface tothe receiving surface of the destination substrate; and separating thecontact surface of the conformable transfer device from thesemiconductor device so that the semiconductor device is transferredonto the receiving surface, thereby assembling the semiconductor deviceon the receiving surface of the destination substrate.
 76. The method ofclaim 75, comprising moving the upper of the conformable transfer deviceand the native substrate in an upward direction at the same time as thelower of the conformable transfer device and the native substrate ismoved downward.
 77. The method of claim 75, wherein a post of theconformable transfer device is compressed in the vertical direction whencontacting the semiconductor device with the conformable transferdevice.
 78. The method of claim 75, wherein the separation of thesemiconductor device and the native substrate occurs at an accelerationgreater than or equal to five g.
 79. The method of claim 75, wherein thenative substrate is disposed beneath the conformable transfer devicewhen contacting the semiconductor device with the conformable transferdevice in the vertical direction, and the native substrate is moveddownward to separate the semiconductor device from the native substrate.80. The method of claim 79, wherein the conformable transfer device ismoved upward at the same time that the native substrate is moveddownward to separate the semiconductor device from the native substrate.81. The method of claim 79, wherein the conformable transfer device isheld substantially stationary at the same time that the native substrateis moved downward to separate the semiconductor device from the nativesubstrate.
 82. The method of claim 75, wherein the conformable transferdevice is disposed beneath the native substrate when contacting thesemiconductor device with the conformable transfer device in thevertical direction, and the conformable transfer device is moveddownward to separate the semiconductor device from the native substrate.83. The method of claim 82, wherein the native substrate is moved upwardat the same time that the conformable transfer device is moved downwardto separate the semiconductor device from the native substrate.
 84. Themethod of claim 82, wherein the native substrate is held substantiallystationary at the same time that the conformable transfer device ismoved downward to separate the semiconductor device from the nativesubstrate.
 85. A motion system for separating a semiconductor deviceformed on a native substrate from the native substrate, comprising: aconformable transfer device having a contact surface; a vertical stagefor holding the native substrate in vertical alignment with theconformable transfer device; the vertical stage comprising a mechanismfor: contacting the semiconductor device with the conformable transferdevice in a vertical direction, wherein contact between the contactsurface and the semiconductor device at least temporarily binds thesemiconductor device to the conformable transfer device; and moving thelower of the conformable transfer device and the native substratedownward to separate the semiconductor device from the native substrateso that the semiconductor device is disposed on the contact surface ofthe conformable transfer device and is released from the nativesubstrate.
 86. The motion system of claim 85, wherein the mechanism:contacts the semiconductor device disposed on the contact surface to areceiving surface of a destination substrate disposed in or on themotion system; and separates the contact surface of the conformabletransfer device from the semiconductor device so that the semiconductordevice is transferred onto the receiving surface, thereby assembling thesemiconductor device on the receiving surface of the destinationsubstrate.
 87. The motion system of claim 85, wherein the mechanismmoves the upper of the conformable transfer device and the nativesubstrate in an upward direction at the same time as the lower of theconformable transfer device and the native substrate is moved downward.88. The motion system of claim 85, wherein the conformable transferdevice comprises a post providing the contact surface and wherein themechanism compresses the post in the vertical direction when contactingthe semiconductor device with the conformable transfer device.
 89. Themotion system of claim 85, wherein the mechanism separates thesemiconductor device and the native substrate at an acceleration greaterthan or equal to five g.
 90. The motion system of claim 85, wherein thevertical stage holds the native substrate beneath the conformabletransfer device when contacting the semiconductor device with theconformable transfer device in the vertical direction, and the mechanismmoves the native substrate downward to separate the semiconductor devicefrom the native substrate.
 91. The motion system of claim 90, whereinthe mechanism moves the conformable transfer device upward at the sametime that the native substrate is moved downward to separate thesemiconductor device from the native substrate.
 92. The motion system ofclaim 85, wherein the vertical stage holds the conformable transferdevice beneath the native substrate when contacting the semiconductordevice with the conformable transfer device in the vertical direction,and the mechanism moves the conformable transfer device downward toseparate the semiconductor device from the native substrate.
 93. Themotion system of claim 92, wherein the mechanism moves the nativesubstrate upward at the same time that the conformable transfer deviceis moved downward to separate the semiconductor device from the nativesubstrate.
 94. The motion system of claim 85, wherein the mechanismholds the upper of the conformable transfer device and the nativesubstrate substantially stationary at the same time as the lower of theconformable transfer device and the native substrate is moved downward.